DD-Amp for Deep Space Communications
Small Business Information
NJ, Fort Lee, NJ, 07024-9212
AbstractAlGaN/GaN MMICs on SiC substrates will be utilized to achieve Power AddedEfficiencies (PAE) in excess of 60%. These wide band-gap solid-statesemiconductors will be used in novel Power Amplifier (PA) topologies such asCurrent Mode Class D (CMCD) and Class J. The power output goal of a singleX-band PA module is 50W, and the power output goal of the Ka-band PA moduleis 10W. In turn, these power modules will be combined using novel combinertopologies including but not limited waveguide and radial power combiners inorder to achieve the high power goal of 1kW at X-Band and greater than150W at Ka-band.Phase I will consist of choosing the devices sizes and topologies for the PAmodules, and performing extensive modeling and simulation, especially forthe large signal non-linear operation with harmonic terminations requiredto achieve the high efficiency goals. In addition, various power combinerconfigurations will be simulated using 2.5D and 3D electromagnetic fieldsolvers. The power combining strategies will be evaluated for overall systemefficiency, size, and weight trade-offs.
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