Embedded 3D Nonvolatile Memory

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX11CH49P
Agency Tracking Number: 105944
Amount: $99,994.00
Phase: Phase I
Program: SBIR
Awards Year: 2011
Solicitation Year: 2010
Solicitation Topic Code: X6.02
Solicitation Number: N/A
Small Business Information
1250 Capital of Texas Highway South, Building 3, Suite 400, Austin, TX, 78746-6446
DUNS: 788622012
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Burt Fowler
 Principal Investigator
 (512) 431-8460
 burt@privatran.com
Business Contact
 Glenn Mortland
Title: CEO
Phone: (512) 633-3476
Email: gmortland@austin.rr.com
Research Institution
 Stub
Abstract
Integrated circuits in NASA spacecraft and vehicle electronics must operate over large temperature extremes and mitigate radiation effects that can result in upset and/or destruction of devices. PrivaTran has previously demonstrated a two-terminal, electronically-programmable resistor as a nonvolatile memory (NVM) element with performance metrics exceeding those of competing technologies, and herein proposes this device as a radiation hardened NVM array formed within the metal interconnect layers of the integrated circuit and fully integrated in a 3D architecture, resulting in significant savings in weight, power and reliability.

* Information listed above is at the time of submission. *

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