Novel Method for Growth of Detector-Grade CZT Crystals
Department of Energy
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6 Huron Drive, Natick, MA, 01760-1325
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AbstractCdZnTe remains the material of choice for room temperature semiconductor detection of X- and -ray radiation. The proposed program seeks to develop an alternate method for growth of this material which would achieve superior material properties similar to those obtained by the slower growth method of Traveling Heater Method, but at a substantially higher growth rates. Material with high compositional uniformity and low precipitate concentration has been demonstrated by this method. The success of this program promises to result in higher availability and lower cost of large volume detectors needed for homeland security and medical applications. Commercial Applications and Other Benefits: Wide band gap semiconductors such as CdZnte are exceptionally suitable for detection of nuclear radiation. They have applications in nuclear science, as well as inspection tools in homeland security, Positron Emission Tomography (PET) and scinti-mammography in medicine, and in geophysics.
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