Novel Method for Growth of Detector-Grade CZT Crystals

Award Information
Agency:
Department of Energy
Amount:
$149,878.00
Program:
SBIR
Contract:
DE-FG02-11ER90076
Solitcitation Year:
2011
Solicitation Number:
DE-FOA-0000413
Branch:
N/A
Award Year:
2011
Phase:
Phase I
Agency Tracking Number:
97530
Solicitation Topic Code:
51 b
Small Business Information
Capesym, Inc.
6 Huron Drive, Natick, MA, 01760-1325
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
807651260
Principal Investigator
 Shariar Motakef
 Dr.
 (508) 653-7100
 motakef@capesim.com
Business Contact
 Shariar Motakef
Title: Dr.
Phone: (508) 653-7100
Email: motakef@capesim.com
Research Institution
 Stub
Abstract
CdZnTe remains the material of choice for room temperature semiconductor detection of X- and -ray radiation. The proposed program seeks to develop an alternate method for growth of this material which would achieve superior material properties similar to those obtained by the slower growth method of Traveling Heater Method, but at a substantially higher growth rates. Material with high compositional uniformity and low precipitate concentration has been demonstrated by this method. The success of this program promises to result in higher availability and lower cost of large volume detectors needed for homeland security and medical applications. Commercial Applications and Other Benefits: Wide band gap semiconductors such as CdZnte are exceptionally suitable for detection of nuclear radiation. They have applications in nuclear science, as well as inspection tools in homeland security, Positron Emission Tomography (PET) and scinti-mammography in medicine, and in geophysics.

* information listed above is at the time of submission.

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