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X-Band Bunched Electron Injector

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-FG02-11ER90209
Agency Tracking Number: 97942
Amount: $150,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: 66 e
Solicitation Number: DE-FOA-0000413
Solicitation Year: 2011
Award Year: 2011
Award Start Date (Proposal Award Date): 2011-06-17
Award End Date (Contract End Date): 2012-05-16
Small Business Information
4431-H Brookfield Corporate Dr
Chantilly, VA 20151-1691
United States
DUNS: 175351121
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Frederick Mako
 (703) 818-9400
Business Contact
 Frederick Mako
Title: Dr.
Phone: (703) 818-9400
Research Institution

The development of high-current, short-duration pulses of electrons has been a challenging problem for many years. High current pulses are widely used in injector systems for electron accelerators, both for industrial linacs as well as high-energy accelerators for linear colliders. Short-duration pulses are also used for microwave generation, in klystrons and related devices, for injectors to perform research on advanced methods of particle acceleration, and for injectors used as free-electron-laser (FEL) drivers. The proposed method to be described below is promising because of a natural bunching process which self-synchronizes to the rf, thus eliminating the need for pre-buncher section(s), timing system, and laser. Also, the repetition rate can be orders of magnitude greater. FM Technologies proposes a novel high current, picosecond X-band injector system which is named the X-Band Bunched Electron Injector (XBEI). The heart of the XBEI is a self-bunching electron gun the Micro-Pulse Gun (MPG). By adding an external electron amplifier stage and high energy RF post acceleration an inexpensive, simple, robust electron injector would be the outcome. Phase I is aimed at measurements of: electron current gain, charge per bunch, rf power, beam power and other key parameters. Commercial Applications and Other Benefits: If successful, this micro XBEI will provide a high power, low emittance, picosecond-long electron source which is suitable for many applications. Of particular interest are high energy picosecond electron injectors for linear colliders, free electron lasers, medical and industrial rf linacs, a high-harmonic, high-frequency driver for rf sources and accelerator test facilities.

* Information listed above is at the time of submission. *

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