Scanning Tunneling Microscopy with a Frequency Comb

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$99,938.00
Award Year:
2011
Program:
STTR
Phase:
Phase I
Contract:
DE-FG02-11ER86495
Award Id:
n/a
Agency Tracking Number:
97173
Solicitation Year:
2011
Solicitation Topic Code:
16 b
Solicitation Number:
DE-FOA-0000413
Small Business Information
2880 S. Main Street, Suite 214, Salt Lake City, UT, 84115-6004
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
623793614
Principal Investigator:
Mark Hagmann
Dr.
(801) 573-9853
MHagmann@NewPathResearch.COM
Business Contact:
Mark Hagmann
Dr.
(801) 573-9853
MHagmann@NewPathResearch.COM
Research Institute:
University of Utah

1471 E. Federal Way
Slat Lake City, UT, 84102-
() -
Nonprofit college or university
Abstract
There is a growing need for new SPM techniques that provide additional information about the sample with higher data rates. In microwave harmonic scanning tunneling microscopy (MHSTM) a microwave signal is coupled to the STM, and several harmonics that are generated by the nonlinearity of the tunneling junction are measured to provide spectroscopic information about the sample such as identifying molecular adsorbates and the high-resolution dopant profiling of semiconductors. The PI has used a passively mode-locked Kerr-lens Ti:sapphire laser to generate a frequency comb in an STM by intermode mixing, and measured the first 12 harmonics in the comb. The decay of the successive harmonics is much less than that in MHSTM so measurements of the magnitude and phase of a large number (perhaps 100) harmonics can be used to characterize the sample and the impedance of the tunneling junction. In Phase I efficient active and passive devices will be developed to couple to a larger number of the harmonics to determine if it is feasible to construct a multi-channel system for collecting and processing the data from the frequency comb in each scan of the STM for Phase II and Phase III. Commercial Applications and Other Benefits: The International Technology Roadmap for Semiconductors (ITRS) for 2009 concurs with earlier editions in stating that there are continued difficult challenges in materials characterization at nanoscale. The rapid shrinking in the size of semiconductors now requires a means for determining 2-D dopant profiles with a spatial resolution of 3 nm or less. NIST Special Publication 1048 addresses the economic significance of the need for innovative instrumentation to measure dopant distribution in sub-22 nm technologies. As already noted, MHSTM can provide high-resolution dopant profiling, and the vastly greater amount of data from the frequency comb will extend this capability. The possible benefits of the new technology to basic research include establishing precise frequency and timing standards at nanoscale, determining local temperature from the width of each peak, and providing a new means for probing other processes within the tunneling junction.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government