High Performance Complex Oxide Thin Film Materials to Enable Switchable Film Bulk Acoustic Resonators (FBAR) for Low-Loss Radio Frequency Devices

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-11-C-0226
Agency Tracking Number: A11A-016-0394
Amount: $99,997.00
Phase: Phase I
Program: STTR
Awards Year: 2011
Solicitation Year: 2011
Solicitation Topic Code: A11a-T016
Solicitation Number: 2011.A
Small Business Information
93 Castilian Drive, Santa Barbara, CA, 93117-
DUNS: 081542636
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Chris Elsass
 VP of Research and Development
 (805) 968-5159
Business Contact
 Chris Elsass
Title: VP of Research and Development
Phone: (805) 968-5159
Email: elsass@agilerf.com
Research Institution
 UC, Santa Barbara
 Kevin S Stewart
 Office of Research
3227 Cheadle Hall
Santa Barbara, CA, 93105-2050
 (805) 893-4034
 Nonprofit college or university
The proposed project focuses on a new technology that has a built-in switch to turn the filter on and off, and thus is functionally equivalent to a high-selectivity filter and a low-loss switch, where the switch draws no DC power. Agile calls this new invention the Switchable Trimmable Acoustic Resonator (STAR). An array of such filters could implement a very compact and reconfigurable high-selectivity filter bank. Similar, BST-based STAR filters could be combined to make a low-loss and high-selectivity duplexer or TR switch. There are many other possibilities for frequency-agile components including filters with selectable and flexible bandwidths. Thus the proposed technology will have a profound impact on the front-end filtering problem in modern communications. This project will investigate the full potential and limits of this technology, and result in the first demonstration of voltage-controlled or tunable STAR devices. The technology is enabled by perovskite oxides, specifically BST and SrTiO3. The quality of the devices is highly sensitive to film quality and orientation. As is well-established in semiconductor devices, molecular beam epitaxy (MBE) offers the highest quality thin film materials and excellent control over film orientation and MBE-grown BST films will be a major focus of this program.

* Information listed above is at the time of submission. *

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