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Defect Passivation for High Performance HgCdTe on Si

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-11-C-7669
Agency Tracking Number: B11A-002-0004
Amount: $149,962.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA11-T002
Solicitation Number: 2011.A
Solicitation Year: 2011
Award Year: 2011
Award Start Date (Proposal Award Date): 2011-09-30
Award End Date (Contract End Date): N/A
Small Business Information
590 Territorial Drive, Suite B
Bolingbrook, IL -
United States
DUNS: 068568588
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Paul Boieriu
 Director of Operations
 (630) 771-0203
Business Contact
 Sivalingam Sivananthan
Title: Chief Executive Officer
Phone: (630) 771-0201
Research Institution
 University of Illinois Chicago
 Luis R Vargas
Office of Research Services 1737 W. Polk St., Rm. 304
Chicago, IL 60612-7227
United States

 (312) 996-9406
 Nonprofit college or university

Hydrogen isotopes have been shown to reduce the electrical effects of various semiconductor defects. Specifically, monoatomic hydrogen and deuterium passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. We propose a novel method of controlling the intake of hydrogen in HgCdTe IRFPAs by using the H2/He plasma afterglow formed by flowing plasma-generated species outside the discharge area. The reduced reactivity of the afterglow plasma will maintain the IRFPA integrity while a nozzle specially designed to generate a supersonic flow and used to extract the hydrogen species increases the static pressure and axial velocity, thereby enhancing the uptake of passivants.

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