Defect Passivation for High Performance HgCdTe on Si

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$149,962.00
Award Year:
2011
Program:
STTR
Phase:
Phase I
Contract:
HQ0147-11-C-7669
Award Id:
n/a
Agency Tracking Number:
B11A-002-0004
Solicitation Year:
2011
Solicitation Topic Code:
MDA11-T002
Solicitation Number:
2011.A
Small Business Information
EPIR Technologies Inc (Currently EPIR Technologies Inc )
590 Territorial Drive, Suite B, Bolingbrook, IL, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
068568588
Principal Investigator:
Paul Boieriu
Director of Operations
(630) 771-0203
contracts@epir.com
Business Contact:
Sivalingam Sivananthan
Chief Executive Officer
(630) 771-0201
ssivananthan@epir.com
Research Institution:
University of Illinois Chicago
Luis R Vargas
Office of Research Services
1737 W. Polk St., Rm. 304
Chicago, IL, 60612-7227
(312) 996-9406
Nonprofit college or university
Abstract
Hydrogen isotopes have been shown to reduce the electrical effects of various semiconductor defects. Specifically, monoatomic hydrogen and deuterium passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. We propose a novel method of controlling the intake of hydrogen in HgCdTe IRFPAs by using the H2/He plasma afterglow formed by flowing plasma-generated species outside the discharge area. The reduced reactivity of the afterglow plasma will maintain the IRFPA integrity while a nozzle specially designed to generate a supersonic flow and used to extract the hydrogen species increases the static pressure and axial velocity, thereby enhancing the uptake of passivants.

* information listed above is at the time of submission.

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