Defect Reductions on Si Substrates for HgCdTe MBE Growth

Award Information
Agency:
Department of Defense
Amount:
$149,979.00
Program:
STTR
Contract:
HQ0147-11-C-7670
Solitcitation Year:
2011
Solicitation Number:
2011.A
Branch:
Missile Defense Agency
Award Year:
2011
Phase:
Phase I
Agency Tracking Number:
B11A-002-0010
Solicitation Topic Code:
MDA11-T002
Small Business Information
Sivananthan Laboratories, Inc.
D/B/A Episensors, Inc., 590 Territorial Dr., Unit H, Bolingbrook, IL, 60440-4881
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
832072149
Principal Investigator
 Suleyman Tari
 Scientist
 (630) 226-0080
 contracts@episensors.us
Business Contact
 Christoph Grein
Title: Chief Scientific Officer
Phone: (630) 226-0080
Email: cgrein@episensors.us
Research Institution
 University of Illinois Chicago
 Luis R Vargas
 1737 West Polk Street (MC 672)
304 Administrative Office Bldg
Chicago, IL, 60612-
 (312) 996-2862
 Nonprofit college or university
Abstract
Current state-of-the-art infrared focal plane arrays (IRFPAs) are based on HgCdTe material epitaxially grown on bulk CdZnTe substrates. The size of the IRFPAs is limited by the size of the available CdZnTe substrates and the thermal mismatch between CdZnTe and the Si readout circuit, which misaligns the photodiode array with respect to the circuit during heating and cooling cycles. Having HgCdTe fabricated on Si-based composite substrates would eliminate the aforementioned drawbacks related to the HgCdTe/CdZnTe system. Indeed, the use of Si-based substrates would also lower imager costs. While a large effort has been put forward to improve the quality of the HgCdTe grown on CdTe/Si, there still remains much room for further advancement. In the proposed effort, Episensors will develop new and innovative chemical mechanical polishing slurries and cleaning techniques that will yield higher quality Si(112) substrates. CdTe/Si layers will be grown in-house via molecular beam epitaxy and the growth of HgCdTe on CdTe/Si will take place at the University of Illinois at Chicago. We will employ advanced methods for characterizing the materials and devices to provide feedback for process optimization.

* information listed above is at the time of submission.

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