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Defect Reductions on Si Substrates for HgCdTe MBE Growth

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-11-C-7670
Agency Tracking Number: B11A-002-0010
Amount: $149,979.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA11-T002
Solicitation Number: 2011.A
Solicitation Year: 2011
Award Year: 2011
Award Start Date (Proposal Award Date): 2011-08-19
Award End Date (Contract End Date): N/A
Small Business Information
D/B/A Episensors, Inc. 590 Territorial Dr., Unit H
Bolingbrook, IL 60440-4881
United States
DUNS: 832072149
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Suleyman Tari
 (630) 226-0080
Business Contact
 Christoph Grein
Title: Chief Scientific Officer
Phone: (630) 226-0080
Research Institution
 University of Illinois Chicago
 Luis R Vargas
1737 West Polk Street (MC 672) 304 Administrative Office Bldg
Chicago, IL 60612-
United States

 (312) 996-2862
 Nonprofit college or university

Current state-of-the-art infrared focal plane arrays (IRFPAs) are based on HgCdTe material epitaxially grown on bulk CdZnTe substrates. The size of the IRFPAs is limited by the size of the available CdZnTe substrates and the thermal mismatch between CdZnTe and the Si readout circuit, which misaligns the photodiode array with respect to the circuit during heating and cooling cycles. Having HgCdTe fabricated on Si-based composite substrates would eliminate the aforementioned drawbacks related to the HgCdTe/CdZnTe system. Indeed, the use of Si-based substrates would also lower imager costs. While a large effort has been put forward to improve the quality of the HgCdTe grown on CdTe/Si, there still remains much room for further advancement. In the proposed effort, Episensors will develop new and innovative chemical mechanical polishing slurries and cleaning techniques that will yield higher quality Si(112) substrates. CdTe/Si layers will be grown in-house via molecular beam epitaxy and the growth of HgCdTe on CdTe/Si will take place at the University of Illinois at Chicago. We will employ advanced methods for characterizing the materials and devices to provide feedback for process optimization.

* Information listed above is at the time of submission. *

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