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Defect Reduction at the Silicon (112) Wafer Surface by Amorphization and Recrystallization

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-11-C-7674
Agency Tracking Number: B11A-002-0020
Amount: $99,912.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA11-T002
Solicitation Number: 2011.A
Solicitation Year: 2011
Award Year: 2011
Award Start Date (Proposal Award Date): 2011-08-19
Award End Date (Contract End Date): N/A
Small Business Information
123 Case Circle, Ardmore, OK, -
DUNS: 159048698
HUBZone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: Y
Principal Investigator
 John Dinan
 Senior Research Scientist
 (703) 360-3872
Business Contact
 Todd Speaks
Title: Comptroller
Phone: (580) 226-2751
Research Institution
 Texas State University
 Thomas Myers
 601 University Dr.
San Marcos, TX, 78666-
 (512) 245-1839
 Nonprofit college or university
Silicon wafers oriented on (112) are the preferred substrates for deposition of mercury cadmium telluride layers by molecular beam epitaxy. Surface defects introduced during polishing of the wafers degrade the quality of the epitaxy and the performance of infrared detectors fabricated within these materials. We propose a process for reducing the density of the defects that are inherent in the silicon and induced during wafer-polishing. The new process begins by ion implantation to render the region near the wafer surface amorphous. Industry-standard chemical-mechanical polishing of the amorphous surface will yield a surface that is smooth. This layer will then be recrystallized by a high-temperature anneal. Prior to annealing, hydrogenation of the wafer will be done to suppress defect formation during recrystallization. We anticipate that improvements in the quality of the (112) silicon surface will lead to higher operability values for LWIR focal plane arrays.

* Information listed above is at the time of submission. *

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