Monolithic Scalable Mid-Infrared Phase-Locked Laser Array

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$149,883.00
Award Year:
2011
Program:
STTR
Phase:
Phase I
Contract:
N68335-11-C-0432
Agency Tracking Number:
N11A-011-0235
Solicitation Year:
2011
Solicitation Topic Code:
N11A-T011
Solicitation Number:
2011.A
Small Business Information
Intraband LLC
200 N. Prospect Ave., Madison, WI, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
829814925
Principal Investigator:
Luke Mawst
Member
(608) 332-2520
mawst@charter.net
Business Contact:
Robert Marsland
President
(608) 239-3296
rmarsland@tds.net
Research Institution:
University of Wisconsin-Madison
Kim Moreland
1415 Engineering Drive
Madison, WI, 53706-
(608) 262-3822
Nonprofit college or university
Abstract
The technical objectives of this proposal are: 1) the design of 3.8-4.2 micron-emitting, active-photonic-crystal (APC) quantum-cascade (QC) lasers by using passive phase-locking in a monolithic structure in order to achieve multiwatt-range, diffraction-limited powers; and 2) the development of the key crystal- growth processes for realizing the proposed APC QC laser: the growth and characterization of QC active- region materials (i.e., InGaAs/AlInAs strained-layer superlattices) on virtual substrates. Novel deep-well (DW) QC lasers will be designed to suppress carrier leakage out of active regions, resulting in electro-optic characteristics with low temperature sensitivity. For achieving high coherent power at the chip level, a novel type of APC-type structure is proposed whose elements are DW-QC lasers emitting in the 3.8-4.2 micron region. The design will be for APC devices of built-in index step an order of magnitude higher than for conventional APC-QC devices, as to achieve stable-beam operation in CW operation to high coherent powers. For 3.8-4.2 micron-emitting devices the design will be for usable CW powers larger than 7 W delivered in diffraction-limited beams. A plan for monolithically scaling coherent power to the 50-100 W range and the economical fabrication of the proposed APC devices with high production yield will be developed.

* information listed above is at the time of submission.

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