Front End Opto-Electronics for Future Radio Communications

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-11-C-0082
Agency Tracking Number: 08ST1-0215
Amount: $750,000.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: ST081-013
Solicitation Number: 2008.A
Solicitation Year: 2008
Award Year: 2011
Award Start Date (Proposal Award Date): 2011-03-17
Award End Date (Contract End Date): N/A
Small Business Information
6457 Howard Street, Niles, IL, 60714
DUNS: 135553472
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Noren Pan
 (847) 588-3001
Business Contact
 Noren Pan
Title: President
Phone: (847) 588-3001
Research Institution
 U of Notre Dame
 Shohn Turner
 511 Main Building
Notre Dame, IN, 46556-
 (574) 631-1085
 Nonprofit college or university
The innovation in this Phase II SBIR program is the development of a unique process technology that will enable the realization of a high current InP based photodetector capable of operating at increased optical power densities and with improved reliability. The process technology is an epitaxial lift-off (ELO) process in which the epitaxial material is completely removed from the InP substrate on which it is grown. The costly substrate is left intact after ELO and can be reused for additional growths, which provides a pathway to lower cost devices. The ELO process can also provide significant improvements in the thermal impedance of the high current photodetector since the substrate is completely eliminated and the remaining photodetector active material can be bonded onto a high thermal conductivity material for efficient heat removal. Alternatively, the active material can be bonded to a flexible plastic material to permit further integration with a conformal patch antenna. Materials of interest for patch antennas include flexible plastics such as Mylar.

* Information listed above is at the time of submission. *

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