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Solutions for Single-Event Effects in Ultra Deep Submicron Semiconductor Technologies Using Simulation and Layout Techniques

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: HDTRA1-11-P-0018
Agency Tracking Number: T102-008-0248
Amount: $99,264.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: DTRA102-008
Solicitation Number: 2010.2
Timeline
Solicitation Year: 2010
Award Year: 2011
Award Start Date (Proposal Award Date): 2011-06-02
Award End Date (Contract End Date): N/A
Small Business Information
7901 Stoneridge Drive Suite 226
Pleasanton, CA -
United States
DUNS: 170882539
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Klas Lilja
 CEO
 (925) 425-0820
 klas.lilja@robustchip.com
Business Contact
 Klas Lilja
Title: CEO
Phone: (925) 425-0820
Email: klas.lilja@robustchip.com
Research Institution
 Stub
Abstract

Robust Chip (RCI) and Vanderbilt University (Vanderbilt) propose a joint project to create and characterize a comprehensive, accurate, single event simulation solution for ultra scaled (45nm, 32nm, and below) CMOS technologies. The project focus is on developing a production strength single event analysis solution for 45nm, 28nm and 22nm CMOS, building on the most advanced single event characterization software available. Additional work on layout implementation and novel layout methodologies, will guide the development of the software solution both for qualification and calibration purposes, and for guidance on and adaption to, important target applications. The key innovations behind the technology in this project, the layout technology LEAP, and the new simulation methodology in accuro, originate in earlier DTRA and DARPA sponsored projects.

* Information listed above is at the time of submission. *

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