Solutions for Single-Event Effects in Ultra Deep Submicron Semiconductor Technologies Using Simulation and Layout Techniques

Award Information
Agency:
Department of Defense
Branch
Defense Threat Reduction Agency
Amount:
$99,264.00
Award Year:
2011
Program:
SBIR
Phase:
Phase I
Contract:
HDTRA1-11-P-0018
Agency Tracking Number:
T102-008-0248
Solicitation Year:
2010
Solicitation Topic Code:
DTRA102-008
Solicitation Number:
2010.2
Small Business Information
Robust Chip Inc.
7901 Stoneridge Drive, Suite 226, Pleasanton, CA, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
170882539
Principal Investigator:
Klas Lilja
CEO
(925) 425-0820
klas.lilja@robustchip.com
Business Contact:
Klas Lilja
CEO
(925) 425-0820
klas.lilja@robustchip.com
Research Institution:
Stub




Abstract
Robust Chip (RCI) and Vanderbilt University (Vanderbilt) propose a joint project to create and characterize a comprehensive, accurate, single event simulation solution for ultra scaled (45nm, 32nm, and below) CMOS technologies. The project focus is on developing a production strength single event analysis solution for 45nm, 28nm and 22nm CMOS, building on the most advanced single event characterization software available. Additional work on layout implementation and novel layout methodologies, will guide the development of the software solution both for qualification and calibration purposes, and for guidance on and adaption to, important target applications. The key innovations behind the technology in this project, the layout technology LEAP, and the new simulation methodology in accuro, originate in earlier DTRA and DARPA sponsored projects.

* information listed above is at the time of submission.

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