Feasibility of Long Wavelength Infrared Focal Plane Arrays Based on Type-II Superlattice Minority Electron Unipolar Architecture

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-11-C-7568
Agency Tracking Number: B103-009-0132
Amount: $99,922.00
Phase: Phase I
Program: SBIR
Awards Year: 2011
Solitcitation Year: 2010
Solitcitation Topic Code: MDA10-009
Solitcitation Number: 2010.3
Small Business Information
MP Technologies, LLC
1801 Maple Avenue, Evanston, IL, -
Duns: 129503988
Hubzone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: N
Principal Investigator
 Ryan McClintock
 Technical Director
 (847) 491-7208
 rmcclin@gmail.com
Business Contact
 Manijeh Razeghi
Title: President
Phone: (847) 491-7208
Email: razeghi@eecs.northwestern.edu
Research Institution
 Stub
Abstract
Recent development of Antimonide-based Type-II superlattice infrared detectors has resulted in significant breakthroughs in terms of device performance as well as FPA imaging quality. Improvement in material quality and processing technique, as well as evolutionary modifications in device architecture have demonstrated the advantages of the material system over alternatives, and proven it as a viable candidate for the next generation infrared imaging. Yet, the performance of this material system has not reached its limits. In this project, we propose to further build upon the gap-engineering capability of Type-II superlattices to develop novel quantum device architecture called Minority Electron Unipolar Photodetector (MEUP). The design is a hybrid between conventional photoconductive and photovoltaic detectors and can benefit from the advantages of both configurations. The novel device architecture is expected to achieve high quantum efficiency while decreasing the dark current and the associated shot-noise. Material growth will be realized on 3"GaSb substrates and optimized for highest quality and excellent uniformity across the wafer. Applying it to LWIR FPAs in Phase II, it is expected to achieve a quantum efficiency above 60% and a dark current density below 1 uA/cm2 at operating temperatures higher than 65 K.

* information listed above is at the time of submission.

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