Large Diameter GaSb Substrate for Large Format SLS FPA Applications

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-11-C-7546
Agency Tracking Number: B103-009-0494
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2011
Solicitation Year: 2010
Solicitation Topic Code: MDA10-009
Solicitation Number: 2010.3
Small Business Information
Intelligent Epitaxy Technology, Inc.
1250 E. Collins Blvd., Richardson, TX, -
DUNS: 059803945
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Paul Pinsukanjana
 VP of Tech./Business
 (972) 234-0068
 pinsu@IntelliEPI.com
Business Contact
 Yung-Chung Kao
Title: President
Phone: (972) 234-0068
Email: kao@IntelliEPI.com
Research Institution
 Stub
Abstract
This Phase I SBIR effort will seek to develop high performance superlattice infrared focal plane array technology by establishing a 4"GaSb substrate manufacturing line based in Texas. Under this program, IntelliEPI proposes to develop 4"GaSb crystal pulling capability based on the vertical gradient freeze method. In addition, a double-side polishing capacity for GaSb up to 4"in diameter will be established. This will provide a supply of high-quality, large diameter substrates to support epitaxial growth development.

* information listed above is at the time of submission.

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