Large Diameter GaSb Substrate for Large Format SLS FPA Applications

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$100,000.00
Award Year:
2011
Program:
SBIR
Phase:
Phase I
Contract:
HQ0147-11-C-7546
Agency Tracking Number:
B103-009-0494
Solicitation Year:
2010
Solicitation Topic Code:
MDA10-009
Solicitation Number:
2010.3
Small Business Information
Intelligent Epitaxy Technology, Inc.
1250 E. Collins Blvd., Richardson, TX, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
059803945
Principal Investigator:
Paul Pinsukanjana
VP of Tech./Business
(972) 234-0068
pinsu@IntelliEPI.com
Business Contact:
Yung-Chung Kao
President
(972) 234-0068
kao@IntelliEPI.com
Research Institution:
Stub




Abstract
This Phase I SBIR effort will seek to develop high performance superlattice infrared focal plane array technology by establishing a 4"GaSb substrate manufacturing line based in Texas. Under this program, IntelliEPI proposes to develop 4"GaSb crystal pulling capability based on the vertical gradient freeze method. In addition, a double-side polishing capacity for GaSb up to 4"in diameter will be established. This will provide a supply of high-quality, large diameter substrates to support epitaxial growth development.

* information listed above is at the time of submission.

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