Fast Wafer-Scale Characterization Techniques for CZT

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-11-C-7523
Agency Tracking Number: B103-031-0220
Amount: $99,974.00
Phase: Phase I
Program: SBIR
Awards Year: 2011
Solicitation Year: 2010
Solicitation Topic Code: MDA10-031
Solicitation Number: 2010.3
Small Business Information
Suite 1B, 6 Huron Drive, Natick, MA, -
DUNS: 087651260
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Shariar Motakef
 President
 (508) 653-7100
 motakef@capesim.com
Business Contact
 Shariar Motakef
Title: President
Phone: (508) 653-7100
Email: motakef@capesim.com
Research Institution
 Stub
Abstract
The goal of this proposal is to develop fast wafer-scale techniques for characterization of Zn-concentration and precipitates and inclusions of Cd and Te. A novel approach to spectrometry will be used to develop a fully automated system for generation of high resolution 2D map of Zn-concentration that promises to be 10x-100x faster than current spectrometers. Advanced image processing techniques will be combined with infrared microscopy to generate 3D wafer-scale map of precipitates and inclusions, as well as decorated line defects in the CZT wafer. These capabilities promise to improve qualification of starting substrates as well as relating performance of MCT detectors with features of the substrate. These tools also promise to provide valuable insight into and help optimize bulk crystal growth processes.

* Information listed above is at the time of submission. *

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