Anti-Reverse Engineering (RE) Techniques

Award Information
Agency:
Department of Defense
Branch
n/a
Amount:
$97,924.00
Award Year:
2011
Program:
SBIR
Phase:
Phase I
Contract:
W31P4Q-11-C-0148
Award Id:
n/a
Agency Tracking Number:
O102-A04-2201
Solicitation Year:
2010
Solicitation Topic Code:
OSD10-A04
Solicitation Number:
2010.2
Small Business Information
9390 Research Blvd, Suite I200, Austin, TX, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135494073
Principal Investigator:
Adam Jachniewicz
Project Manager
(512) 795-0220
adam.jachniewicz@crossfieldtech.com
Business Contact:
Dennis Ferguson
Senior Partner
(512) 795-0220
dennis.ferguson@crossfieldtech.com
Research Institute:
Stub




Abstract
Crossfield intends to show an anti-reverse engineering methodology that encompasses several innovative features to thwart reverse engineering attempts by third parties. This anti-reverse engineering methodology exploits doped resistive paths (DRPs) in the substrate and/or at the poly-silicon transistor gate levels. They can be formed by overlaying dopant fields implanted with multiple energies and species in the same region of device to generate unique electrical responses. The DRPs can be formed by using implants that are already a part of the semiconductor device process flow and made on open real estate regions on floor-plans of the existing device designs. With clever placement, the DRPs can be hidden either in the periphery areas, in-between regular circuits, or disguised within standard logic cells.

* information listed above is at the time of submission.

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