Single Event Transient Effects for Sub-65 nm Complementary Metal-Oxide Semiconductor (CMOS) Technologies

Award Information
Agency:
Department of Defense
Branch
n/a
Amount:
$99,883.00
Award Year:
2011
Program:
SBIR
Phase:
Phase I
Contract:
FA9453-11-M-0087
Award Id:
n/a
Agency Tracking Number:
F103-087-2726
Solicitation Year:
2010
Solicitation Topic Code:
AF103-087
Solicitation Number:
2010.3
Small Business Information
5820 Stoneridge Mall Rd., Suite 100, Pleasanton, CA, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
170882539
Principal Investigator:
Klas Lilja
CEO
(925) 425-0820
klas.lilja@robustchip.com
Business Contact:
Klas Lilja
CEO
(925) 425-0820
klas.lilja@robustchip.com
Research Institution:
Stub




Abstract
ABSTRACT: Robust Chip (RCI) and Vanderbilt University (Vanderbilt) propose a joint project to create and characterize a comprehensive, accurate, single event simulation solution for ultra scaled (45nm, 32nm, and below) CMOS technologies. Development work on novel layout techniques for ultra deep submicron technologies will be integrated in this project as well, through the development of specific layouts and test structures to verify simulation accuracy in a 45nm (and below) technology. The simulation technology will be a very important building block in the design flow for a radhard designer, providing the fundamental information about single event behavior of the basic building blocks in the design. Furthermore, the technology supports RHBD layout methodology and the incorporation of RHBD techniques in layout synthesis tools. BENEFIT: The project focus is on developing a production strength single event analysis solution for 45nm, 28nm and 22nm CMOS, building on the most advanced single event characterization software available. The additional work on layout implementation and novel layout methodologies, will guide the development of the software solution both for qualification and calibration purposes, and for guidance on and adaption to, important target applications. The key innovations behind the technology in this project, the layout technology LEAP, and the new simulation methodology in accuro, originate in earlier DTRA and DARPA sponsored projects. The dedicated, unique simulation solution is of great strategic significance, providing an ability to accurately model effects that cannot be measured directly, reducing the very expensive and costly experimental testing (and possible re-designs), and providing a unique design support which will allow for the generation of the best possible radhard circuits and layouts with a minimum of performance penalty.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government