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Radiation-Hardened, Resistive Random Access Memory

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-11-M-0102
Agency Tracking Number: F103-093-1784
Amount: $99,997.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: AF103-093
Solicitation Number: 2010.3
Solicitation Year: 2010
Award Year: 2011
Award Start Date (Proposal Award Date): 2011-02-18
Award End Date (Contract End Date): N/A
Small Business Information
1415 Bond St. #111
Naperville, IL -
United States
DUNS: 844118195
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Robert Patti
 (630) 505-0404
Business Contact
 Robert Patti
Title: CTO
Phone: (630) 505-0404
Research Institution

ABSTRACT: Tezzaron intends to develop a nonvolatile low latency memory based on 3D assembly of RRAM memory cell wafers with CMOS logic wafers. The very high density 3D interconnect that Tezzaron can produce allows circuitry to be manufactured on different wafers in different semiconductor processes and then integrated into a single polylithic substrate that acts as if were a single circuit. The combination of traditional CMOS and RRAM technology in a 3D integrated circuit allows exploitation of a new higher risk technology such as RRAM but with the confidence of using well known circuit design techniques and existing processes for much of the new component. The 3D integrated circuit approach also addresses another critical concern which is yield. Newer process technologies are plagued by low yields stemming from inferior material purity. This is a know issue with many experimental materials employed in RRAMs. 3D integration permits enhanced repair and redundancy due to the use of the high speed CMOS logic process and the additional wiring capacity 3D integration affords. This is a requirement for commercialization of large high density memories fabricated with any of the possible RRAM technologies. BENEFIT: It is anticipated the final device will provide a high density nonvolatile memory with high radiation tolerance. The development of a low latency random access nonvolatile memory developed with 3D integration addresses the commercial issues that are limiting acceptance RRAM technology. The technology will have direct use in many commercial and consumer devices, especially handheld devices such as smart phones and PDAs.

* Information listed above is at the time of submission. *

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