High Power, Highly Linear Photodiode Arrays with Integrated RF Power Combiner for 2 - 20 GHz Applications

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: N10PC20188
Agency Tracking Number: 10SB1-0290
Amount: $98,955.00
Phase: Phase I
Program: SBIR
Awards Year: 2010
Solicitation Year: 2010
Solicitation Topic Code: SB101-008
Solicitation Number: 2010.1
Small Business Information
119 Silvia Street, Ewing, NJ, 08628
DUNS: 824781769
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Abhay Joshi
 President and CEO
 (609) 434-1311
 abhay@chipsat.com
Business Contact
 Abhay Joshi
Title: President and CEO
Phone: (609) 434-1311
Email: abhay@chipsat.com
Research Institution
N/A
Abstract
We propose to develop high-power, highly linear photodiodes having the following specifications at 1550 nm wavelength per photodiode: (1) 3 dB bandwidth > 20 GHz, (2) DC photocurrent > 200 mA, (3) maximum RF output power > 1 W, (4) two-tone OIP3 > 55 dBm, and (5) power-to-phase conversion factor < 3 rad/W. In conjunction with the significant advances in the state-of-the-art in individual photodiode performance, as mentioned above, we will demonstrate further ~ 6 dB enhancement in maximum RF output power and OIP3 by combining the RF outputs of an array of the proposed photodiodes with a RF Wilkinson combiner.

* Information listed above is at the time of submission. *

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