High Power, Highly Linear Photodiode Arrays with Integrated RF Power Combiner for 2 - 20 GHz Applications

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$98,955.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
N10PC20188
Agency Tracking Number:
10SB1-0290
Solicitation Year:
2010
Solicitation Topic Code:
SB101-008
Solicitation Number:
2010.1
Small Business Information
Discovery Semiconductors, Inc.
119 Silvia Street, Ewing, NJ, 08628
Hubzone Owned:
N
Socially and Economically Disadvantaged:
Y
Woman Owned:
N
Duns:
824781769
Principal Investigator:
Abhay Joshi
President and CEO
(609) 434-1311
abhay@chipsat.com
Business Contact:
Abhay Joshi
President and CEO
(609) 434-1311
abhay@chipsat.com
Research Institution:
n/a
Abstract
We propose to develop high-power, highly linear photodiodes having the following specifications at 1550 nm wavelength per photodiode: (1) 3 dB bandwidth > 20 GHz, (2) DC photocurrent > 200 mA, (3) maximum RF output power > 1 W, (4) two-tone OIP3 > 55 dBm, and (5) power-to-phase conversion factor < 3 rad/W. In conjunction with the significant advances in the state-of-the-art in individual photodiode performance, as mentioned above, we will demonstrate further ~ 6 dB enhancement in maximum RF output power and OIP3 by combining the RF outputs of an array of the proposed photodiodes with a RF Wilkinson combiner.

* information listed above is at the time of submission.

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