High Power, Highly Linear Photodiode Arrays with Integrated RF Power Combiner for 2 - 20 GHz Applications

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$98,955.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
N10PC20188
Award Id:
96750
Agency Tracking Number:
10SB1-0290
Solicitation Year:
n/a
Solicitation Topic Code:
DARPA 10-008
Solicitation Number:
n/a
Small Business Information
119 Silvia Street, Ewing, NJ, 08628
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
824781769
Principal Investigator:
Abhay Joshi
President and CEO
(609) 434-1311
abhay@chipsat.com
Business Contact:
Abhay Joshi
President and CEO
(609) 434-1311
abhay@chipsat.com
Research Institution:
n/a
Abstract
We propose to develop high-power, highly linear photodiodes having the following specifications at 1550 nm wavelength per photodiode: (1) 3 dB bandwidth > 20 GHz, (2) DC photocurrent > 200 mA, (3) maximum RF output power > 1 W, (4) two-tone OIP3 > 55 dBm, and (5) power-to-phase conversion factor < 3 rad/W. In conjunction with the significant advances in the state-of-the-art in individual photodiode performance, as mentioned above, we will demonstrate further ~ 6 dB enhancement in maximum RF output power and OIP3 by combining the RF outputs of an array of the proposed photodiodes with a RF Wilkinson combiner.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government