Production of Reduced Defect Density (112) Silicon Wafers Utilizing Ultra- Gentle, Chemical Mechanical Smoothening (CMS) Process

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$98,658.00
Award Year:
2011
Program:
SBIR
Phase:
Phase I
Contract:
W909MY-11-C-0040
Agency Tracking Number:
A111-030-1329
Solicitation Year:
2011
Solicitation Topic Code:
A11-030
Solicitation Number:
2011.1
Small Business Information
Sinmat Inc
2153 Hawthorne Road, GTEC Center, Suite 129, Box2, Gainesville, FL, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
Y
Duns:
024935517
Principal Investigator:
Deepika Singh
President&CEO
(352) 334-7237
singh@sinmat.com
Business Contact:
Deepika Singh
President&CEO
(352) 334-7237
singh@sinmat.com
Research Institution:
Stub




Abstract
As the epi quality of HgCdTe layers is dependent on the quality of silicon surfaces, it is imperative that the (112) Si surfaces be pristine and devoid of defects. Unfortunately, the commercial available (112) Si surfaces are typically poor quality due to the presence of large number of COP (crystal originated particle) defects. Such defects arise during crystal growth and are further delineated by the standard CMP (chemical mechanical polishing) process used in the industry. Thus, to enhance the crystalline quality of (112) wafers, new methods to eliminate COP defects, and the development of ultra-smooth and ultra-gentle CMP polishing techniques that are optimized for (112) wafers will be explored as part of this project. Sinmat's technology is based on combination of unique thermal annealing and polishing process. Using unique particles and chemical additives, ultra-gentle and ultra-smooth polishing process for (112) substrates will be developed.

* information listed above is at the time of submission.

Agency Micro-sites

US Flag An Official Website of the United States Government