AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$999,973.00
Award Year:
2011
Program:
SBIR
Phase:
Phase II
Contract:
HQ0147-11-C-7266
Agency Tracking Number:
B2-1660
Solicitation Year:
2008
Solicitation Topic Code:
MDA08-029
Solicitation Number:
2008.3
Small Business Information
Nitek Inc
1804 Salem Church Road, Irmo, SC, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
Y
Duns:
167443170
Principal Investigator:
Vinod Adivarahan
Principal Investigator
(877) 230-5338
vinod@nitekusa.com
Business Contact:
Rubina Khan
CEO and President
(877) 230-5338
ruby@nitekusa.com
Research Institution:
Stub




Abstract
The goal of the Phase II program is to fabricate high voltage high power converter/inverters for high frequency/high temperature operation using enhancement mode-depletion mode insulating ate AlInN-GaN/i-SiC transistor building blocks. Our technical approach is to use lattice matched AlInN-GaN epilayers in conjunction with a field-plated insulating gate HEMT device design and a fluorine treatment to accomplish the goal. We believe that the combination of lattice matched AlInN field-plated HEMTs, a unique pulsed PECVD insulator deposition and the use of a controlled fluorine treatment should overcome the issues currently faced by the AlGaN-GaN based technology. The suitability of our devices for military and commercial applications will be established via a joint processing and device testing program. In the Phase III program we will develop a large volume manufacturing technology for epitaxial wafers and devices for supply to DOD and commercial outfits in a strategic partnership with a large company.

* information listed above is at the time of submission.

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