In-situ Stress and Temperature Optical Monitoring for low-cost heteroepitaxial substrates for HgCdTe infrared detectors.

Award Information
Agency:
Department of Defense
Branch
n/a
Amount:
$723,505.00
Award Year:
2011
Program:
SBIR
Phase:
Phase II
Contract:
W909MY-11-C-0065
Award Id:
n/a
Agency Tracking Number:
A2-4635
Solicitation Year:
2009
Solicitation Topic Code:
A09-151
Solicitation Number:
2009.3
Small Business Information
2182 Bishop Circle East, Dexter, MI, 48130
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
801558578
Principal Investigator:
CharlesTaylor
Product Development Manag
(734) 426-7977
cataylor@k-space.com
Business Contact:
DarrylBarlett
General Manager
(734) 426-7977
djbarlett@k-space.com
Research Institute:
Stub




Abstract
An integrated, in-situ, real-time, optical metrology system will be developed to measure temperature, film stress and reflectivity during CdTe and HgCdTe-based deposition applications. Temperature measurement will be performed using band-edge thermometry and blackbody radiation analysis to provide a measurement range of 25-800 degrees C on Si, GaAs, and CdTe-buffered Si/GaAs substrates. The system will be capable of full 2D substrate temperature profiling to provide uniformity analysis. Stress and reflectivity measurement will be made using an etalon-based multiple laser beam array. All measurements will be made simultaneously and will be synchronized to the substrate rotation. The system will be designed with the flexibility to be mounted on multiple reactor geometries.

* information listed above is at the time of submission.

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