Indium Surface Preparation for Improved Flip-Chip Hybridization

Award Information
Agency:
Department of Defense
Branch
n/a
Amount:
$727,272.00
Award Year:
2011
Program:
SBIR
Phase:
Phase II
Contract:
W909MY-11-C-0067
Award Id:
n/a
Agency Tracking Number:
A2-4649
Solicitation Year:
2010
Solicitation Topic Code:
A10-017
Solicitation Number:
2010.1
Small Business Information
4459 White Bear Parkway, White Bear Lake, MN, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
Y
Duns:
156974024
Principal Investigator:
GregWagner
CTO
(651) 789-9000
gwagner@arcnano.com
Business Contact:
JudyDugas
CFO
(651) 789-9000
jdugas@arcnano.com
Research Institute:
Stub




Abstract
The purpose of this SBIR research is to develop an Indium Oxide (InOx) inhibitor coating for applications to high performing Large Format and High Definition FPAs with a fast hybridization cycle time and high yield. The primary constraint for this method of hybridization is an Indium Oxide layer present on the surface of the Indium bumps at elevated temperatures. The Indium Oxide layer, at the scales and form factors of future FPA products, effectively packages the pure Indium and prevents free form reflow of the Indium bump. This restricts the effectiveness and capability of the FPA and ROIC bond process. The technology being developed in this SBIR will solve this fundamental material limitation. A solution to this fundamental material property is required to advance state of the art FPA technology.

* information listed above is at the time of submission.

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