Defect Engineering of TlBr for Room Temperature Radiation Detection
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AbstractTlBr is a promising gamma radiation semiconductor detector material primarily due to its high Z component and high density. TlBr detectors, however, suffer from polarization at room temperature and degrade rapidly under applied bias. Polarization is associated with ionic conductivity in this material. This proposal is focused on controlling the point, chemical, and crystalline defects in TlBr to minimize ionic conduction, and thereby enable operation of this promising detector at room temperature.
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