Defect Engineering of TlBr for Room Temperature Radiation Detection

Award Information
Agency: Department of Homeland Security
Branch: N/A
Contract: HSHQDC-12-C-00099
Agency Tracking Number: DNDOSBIR12-04-FP-001-CAPE
Amount: $150,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2012
Solicitation Year: 2012
Solicitation Topic Code: 12.1-004
Solicitation Number: N/A
Small Business Information
6 Huron Drive, Suite 1B, Natick, MA, 01760-1325
DUNS: 807651260
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Shariar Motakef
Business Contact
 Shariar Motakef
Research Institution
TlBr is a promising gamma radiation semiconductor detector material primarily due to its high Z component and high density. TlBr detectors, however, suffer from polarization at room temperature and degrade rapidly under applied bias. Polarization is associated with ionic conductivity in this material. This proposal is focused on controlling the point, chemical, and crystalline defects in TlBr to minimize ionic conduction, and thereby enable operation of this promising detector at room temperature.

* Information listed above is at the time of submission. *

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