Advanced Epitaxial Lift-Off Quantum Dot Photovoltaic Devices

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$125,000.00
Award Year:
2012
Program:
STTR
Phase:
Phase I
Contract:
NNX12CG11P
Award Id:
n/a
Agency Tracking Number:
110183
Solicitation Year:
2011
Solicitation Topic Code:
T3.01
Solicitation Number:
n/a
Small Business Information
6457 Howard Street, Niles, IL, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135553472
Principal Investigator:
Rao Tatavarti
Principal Investigator
(847) 588-3001
rtatavarti@mldevices.com
Business Contact:
Noren Pan
Business Official
(847) 588-3001
npan@mldevices.com
Research Institution:
Rochester Institute of Technology
David Harrison
141 Lomb Memorial Drive
Rochester, NY, 14623-5608
() -
Domestic nonprofit research organization
Abstract
We propose to develop a high-efficiency, triple-junction, epitaxial lift-off (ELO) solar cell by incorporating quantum dots (QDs) within the current-limiting subcell. We intend to leverage existing QD epitaxy processes developed by the Rochester Institute of Technology and combine this with MicroLink's expertise in multi-junction cell growth and ELO technology. We will employ QDs to enhance the middle cell absorption in a InGaP/GaAs/InGaAs metamorphic IMM cell. Detailed balance calculations indicate that the triple junction efficiency can be increased to ~42% by reducing the bandgap of the middle cell to ~1.2 eV. The combination of the QD technology with multi-junction ELO technology will be exploited in two ways: i) ELO GaAs cells with QD can be grown into full triple-junction cells and ii) back-surface reflectors on the ELO cells will be used to improve absorption by routing IR light for a second pass through the QD subcell. The relevance of this work to NASA is that it will result in lightweight, high-efficiency, triple-junction solar cells that will have a specific power>500 W/kg. In addition, the use of QDs has been shown to improve radiation tolerance of the photovoltaic device.

* information listed above is at the time of submission.

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