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High Performance InAs and InN Semiconductor Gas Sensors

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-12-C-0077
Agency Tracking Number: A12A-014-0297
Amount: $100,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A12a-T014
Solicitation Number: 2012.A
Solicitation Year: 2012
Award Year: 2012
Award Start Date (Proposal Award Date): 2012-09-13
Award End Date (Contract End Date): N/A
Small Business Information
201 Circle Drive North Unit # 102
Piscataway, NJ -
United States
DUNS: 787144807
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Nick Sbrockey
 Principal Scientist
 (732) 302-9274
Business Contact
 Gary Tompa
Title: President
Phone: (732) 302-9274
Research Institution
 University of South Carolina
 R. S Etheredge
901 Sumter Street Suite 510
Columbia, SC 29208-
United States

 (803) 777-4457
 Nonprofit College or University

In this STTR program, Structured Materials Industries, Inc. (SMI) and partners will develop low-cost, planar gas sensors, with high sensitivity and high selectivity. Gas sensors are critical to many existing and emerging applications in defense and homeland security. Present technology gas sensors based on metal oxide films do not have the required sensitivity or selectivity. The technical approach of this STTR effort is based on thin films of the III-V compound semiconductors indium arsenide (InAs) and indium nitride (InN). InAs and InN are unique semiconductor materials with a high surface accumulation of electrons. Therefore, the conductivity of these materials can be extremely sensitive to adsorbed species. Surface functionalization layers can also be designed and added to these gas sensors, to impart high selectivity to specific analytes.

* Information listed above is at the time of submission. *

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