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HOVPE Growth of High Quality AlGaN on AlN substrates

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-12-C-0082
Agency Tracking Number: A12A-019-0389
Amount: $100,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A12a-T019
Solicitation Number: 2012.A
Solicitation Year: 2012
Award Year: 2012
Award Start Date (Proposal Award Date): 2012-09-13
Award End Date (Contract End Date): N/A
Small Business Information
201 Circle Drive North Unit # 102
Piscataway, NJ -
United States
DUNS: 787144807
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Nick Sbrockey
 Principal Scientist
 (732) 302-9274
Business Contact
 Gary Tompa
Title: President
Phone: (732) 302-9274
Research Institution
 Penn State University
 Kevin White
222 Northpointe Boulevard
Freeport, PA 16229-
United States

 (724) 295-7000
 Nonprofit College or University

In this STTR program, Structured Materials Industries, Inc. (SMI) along with the Electro Optics Center - Pennsylvania State University will apply its hybrid Hydride Metal-Organic Vapor Phase Epitaxy (HOVPE) based growth methods to produce optimum quality AlxGa1-xN on AlN substrates. The Phase I goal is to convincingly demonstrate the advantages of the HOVPE technique to produce high quality, epitaxial AlGaN material, with a concentration on decreased dislocation density. Successful conclusion of this work will produce device quality AlGaN layers for high electron mobility transistors, high power electronics and optical components.

* Information listed above is at the time of submission. *

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