HOVPE Growth of High Quality AlGaN on AlN substrates

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$100,000.00
Award Year:
2012
Program:
STTR
Phase:
Phase I
Contract:
W911NF-12-C-0082
Agency Tracking Number:
A12A-019-0389
Solicitation Year:
2012
Solicitation Topic Code:
A12a-T019
Solicitation Number:
2012.A
Small Business Information
Structured Materials Industries
201 Circle Drive North, Unit # 102, Piscataway, NJ, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
787144807
Principal Investigator:
Nick Sbrockey
Principal Scientist
(732) 302-9274
sbrockey@structuredmaterials.com
Business Contact:
Gary Tompa
President
(732) 302-9274
GSTompa@structuredmaterials.com
Research Institution:
Penn State University
Kevin White
222 Northpointe Boulevard
Freeport, PA, 16229-
(724) 295-7000
Nonprofit college or university
Abstract
In this STTR program, Structured Materials Industries, Inc. (SMI) along with the Electro Optics Center - Pennsylvania State University will apply its hybrid Hydride Metal-Organic Vapor Phase Epitaxy (HOVPE) based growth methods to produce optimum quality AlxGa1-xN on AlN substrates. The Phase I goal is to convincingly demonstrate the advantages of the HOVPE technique to produce high quality, epitaxial AlGaN material, with a concentration on decreased dislocation density. Successful conclusion of this work will produce device quality AlGaN layers for high electron mobility transistors, high power electronics and optical components.

* information listed above is at the time of submission.

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