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HOVPE Growth of High Quality AlGaN on AlN substrates
Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-12-C-0082
Agency Tracking Number: A12A-019-0389
Amount:
$100,000.00
Phase:
Phase I
Program:
STTR
Solicitation Topic Code:
A12a-T019
Solicitation Number:
2012.A
Timeline
Solicitation Year:
2012
Award Year:
2012
Award Start Date (Proposal Award Date):
2012-09-13
Award End Date (Contract End Date):
N/A
Small Business Information
201 Circle Drive North
Unit # 102
Piscataway, NJ
-
United States
DUNS:
787144807
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Nick Sbrockey
Title: Principal Scientist
Phone: (732) 302-9274
Email: sbrockey@structuredmaterials.com
Title: Principal Scientist
Phone: (732) 302-9274
Email: sbrockey@structuredmaterials.com
Business Contact
Name: Gary Tompa
Title: President
Phone: (732) 302-9274
Email: GSTompa@structuredmaterials.com
Title: President
Phone: (732) 302-9274
Email: GSTompa@structuredmaterials.com
Research Institution
Name: Penn State University
Contact: Kevin White
Address:
Phone: (724) 295-7000
Type: Nonprofit College or University
Contact: Kevin White
Address:
222 Northpointe Boulevard
Freeport, PA
16229-
United States
Phone: (724) 295-7000
Type: Nonprofit College or University
Abstract
In this STTR program, Structured Materials Industries, Inc. (SMI) along with the Electro Optics Center - Pennsylvania State University will apply its hybrid Hydride Metal-Organic Vapor Phase Epitaxy (HOVPE) based growth methods to produce optimum quality AlxGa1-xN on AlN substrates. The Phase I goal is to convincingly demonstrate the advantages of the HOVPE technique to produce high quality, epitaxial AlGaN material, with a concentration on decreased dislocation density. Successful conclusion of this work will produce device quality AlGaN layers for high electron mobility transistors, high power electronics and optical components.
* Information listed above is at the time of submission. *
