Defect Reduction Techniques for Large Format Infrared Detector Materials

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,916.00
Award Year:
2012
Program:
STTR
Phase:
Phase I
Contract:
HQ0147-12-C-7675
Award Id:
n/a
Agency Tracking Number:
B11A-002-0021
Solicitation Year:
2011
Solicitation Topic Code:
MDA11-T002
Solicitation Number:
2011.A
Small Business Information
21832 Seacrest Lane, Huntington Beach, CA, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
830609090
Principal Investigator:
Honnavlli Vydyanath
Chief Scientist
(714) 717-6675
hvydyanath@gmail.com
Business Contact:
Honnavlli Vydyanath
President
(714) 717-6675
hvydyanath@gmail.com
Research Institution:
Rensselaer Polytechnic Institute
Richard E Scammell
110 Eigth Street
Troy, NY, 12180-3590
(518) 276-6281
Nonprofit college or university
Abstract
Phase I objective is to demonstrate the feasiblility of our proposed approach to minimize the defect and dislocation size and densities in Si substrate based HgCdTe epitaxial layers with a cut off wavelength of ~10 microns at 77 K. Phase II effort will validate our approach with demonstration of large area Si substrate based HgCdTe epitaxial layers with area in excess of 25 cm2 and in addition demonstrate FPAs in large array formats with state of the art performance in these epitaxial layers.

* information listed above is at the time of submission.

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