High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-12-C-0328
Agency Tracking Number: N12A-003-0193
Amount: $80,000.00
Phase: Phase I
Program: STTR
Awards Year: 2012
Solicitation Year: 2012
Solicitation Topic Code: N12A-T003
Solicitation Number: 2012.A
Small Business Information
450 South Lake Jessup Avenue, Oviedo, FL, -
DUNS: 786242094
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Guowei Zhao
 Research Scientist
 (321) 274-7596
 zhaogw7@gmail.com
Business Contact
 Sabine Freisem
Title: President
Phone: (407) 929-6675
Email: sabine.freisem@gmail.com
Research Institution
 UCF/CREOL
 Arlisia Potter
 12201 Research Parkway
Suite 501
Orlando, FL, 32826-3246
 (407) 882-2018
 Nonprofit college or university
Abstract
High quality laser materials based on InP, InGaAs, InAlGaAs, and InAs are proposed to develope high power 3 to 3.5 m diode lasers. An adiabatically broadened amplifying section is proposed to reach high power with high beam quality. The active material uses strained layer epitaxy to rely only on high quality laser materials that can be grown by molecular beam epitaxy, and with high quality on InP substrates. Highly strained active layer can lead to rapid commercial production because of compatibility with existing military suppliers of diode laser epitaxy.

* Information listed above is at the time of submission. *

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