High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$80,000.00
Award Year:
2012
Program:
STTR
Phase:
Phase I
Contract:
N68335-12-C-0328
Award Id:
n/a
Agency Tracking Number:
N12A-003-0193
Solicitation Year:
2012
Solicitation Topic Code:
N12A-T003
Solicitation Number:
2012.A
Small Business Information
450 South Lake Jessup Avenue, Oviedo, FL, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
786242094
Principal Investigator:
Guowei Zhao
Research Scientist
(321) 274-7596
zhaogw7@gmail.com
Business Contact:
Sabine Freisem
President
(407) 929-6675
sabine.freisem@gmail.com
Research Institution:
UCF/CREOL
Arlisia Potter
12201 Research Parkway
Suite 501
Orlando, FL, 32826-3246
(407) 882-2018
Nonprofit college or university
Abstract
High quality laser materials based on InP, InGaAs, InAlGaAs, and InAs are proposed to develope high power 3 to 3.5 m diode lasers. An adiabatically broadened amplifying section is proposed to reach high power with high beam quality. The active material uses strained layer epitaxy to rely only on high quality laser materials that can be grown by molecular beam epitaxy, and with high quality on InP substrates. Highly strained active layer can lead to rapid commercial production because of compatibility with existing military suppliers of diode laser epitaxy.

* information listed above is at the time of submission.

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