Producibility of Gallium Nitride Semiconductor Materials

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$999,995.00
Award Year:
2012
Program:
STTR
Phase:
Phase II
Contract:
HQ0147-11-C-7760
Award Id:
n/a
Agency Tracking Number:
B2-1783
Solicitation Year:
2009
Solicitation Topic Code:
MDA09-T001
Solicitation Number:
2009.B
Small Business Information
8829 Midway West Road, Raleigh, NC, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
Bob Metzger
Chief Engineer
(919) 789-8880
metzger@kymatech.com
Business Contact:
Heather Splawn
Director of Business Development
(919) 789-8880
contracts@kymatech.com
Research Institution:
The Pennsylvania State University
Dave Snyder
Electro-Optics Center
University Park, PA, 16802-
(814) 867-1560
Nonprofit college or university
Abstract
The overall objective of this program is to improve the producibility of HVPE GaN through the use of in-situ monitoring during the growth process. Various in-situ monitoring devices will be used: a UV absorption technique to monitor the GaCl concentration above the growing GaN wafer; a commercial BandiT system capable of measuring optical emission from the growing wafer in order to measure the substrate temperature; a commericial MOSS system to measure wafer bow during growth; an acoustic emission monitor to understand wafer cracking; and a differentially pumped mass spectrometer to measure the concentrations of various species in the exhaust of the reactor. In conjunction with thermal, gas flow, and chemical reaction simulation, these in-situ monitoring devices will allow for better control of key growth variables, which in turn will lead to the development of a robust, producible growth processes. The aim of these in-situ monitor defined growth processes is to give maximum process latitude in the development of optimized and reproducible growth parameters, specifically tuned to improve yield in large area wafers and thicker boules, whose quality will be verified by demonstrating high quality homoepitaxy, as evidenced by high mobility and high sheet density 2DEGs with the University partner.

* information listed above is at the time of submission.

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