AlInN/GaN HFET over Free-Standing bulk GaN substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-11-C-7762
Agency Tracking Number: B2-1788
Amount: $999,859.00
Phase: Phase II
Program: STTR
Awards Year: 2012
Solicitation Year: 2009
Solicitation Topic Code: MDA09-T001
Solicitation Number: 2009.B
Small Business Information
1195 Atlas Road, Columbia, SC, 29201
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Daniel Billingsley
 Senior Growth Engineer
 (803) 647-9757
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Research Institution
 Rensselaer Polytechnic Institute
 M. Shur
 110 8th St
Troy, NY, 12180-
 (518) 276-2201
 Nonprofit college or university
This proposed research for Phase II consideration involves the growth of AlInN/GaN heterostructure field effect transistors (HFET) on bulk GaN substrates. By combining a homoepitaxial substrate for the growth of the heterostructures with the lattice-matching ability of the AlInN alloy, it is expected that the defect density in the eventual HFETs can be reduced significantally, ultimately improving device performance and reliability. By eliminating the need to use coventional, non-native substrates such as silicon carbide or sapphire, the highly defective buffer layers used to accommodate the lattice-mismatch can be negated. Furthermore, utilizing AlInN, the alloy composition can be tuned, resulting in a film which is lattice-matched to the underlying GaN buffer layer, eliminating generation of defects at the heterostucture interface which negatively affect the two-dimensional electron gas (2DEG). Therefore, we propose to utilize our proprietary MEMEOCVD growth technique to achieve lattice-matched AlInN/GaN heterostructures which will be deposited on low dislocation density bulk GaN substrates. Additionally, multiple optical and structural characterization techniques will be employed to estimate and optimize the defect density of the films.

* Information listed above is at the time of submission. *

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