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Deep ultraviolet laser for Raman spectroscopy

Award Information
Agency: Department of Defense
Branch: Army
Contract: W31P4Q-12-C-0246
Agency Tracking Number: A2-4983
Amount: $749,999.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: A11a-T005
Solicitation Number: 2011.A
Timeline
Solicitation Year: 2011
Award Year: 2012
Award Start Date (Proposal Award Date): 2012-09-27
Award End Date (Contract End Date): 2013-09-30
Small Business Information
1430 N. 6th Ave.
Tucson, AZ -
United States
DUNS: 601990778
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Lloyd LaComb
 Optical Enginer
 (520) 360-8907
 lacomb@tipdllc.com
Business Contact
 James Fountain
Title: Business Manager
Phone: (520) 250-4405
Email: fountain@tipdllc.com
Research Institution
 University of Arizona
 Sherry L Esham
 
PO Box 3308 888 N Euclid Ave Ste 510
Tucson, AZ 85722-3308
United States

 (520) 626-6000
 Nonprofit College or University
Abstract

The Phase II program proposes to commercialize frequency quadrupling technology developed in the College of Optical Sciences at the University of Arizona to build a 244 nm UV frequency quadrupled optically pumped semiconductor laser (FQ-OPSL). The laser will provide a self-contained small footprint (<1 cu. ft.) compared to commercially available Ar ion or Kr ion laser which required an external water chiller, nitrogen purges, and consume more than 5 cu. ft. of lab space. The FQ-OPSL will provide 100 mW of power at 244 nm comparable to the larger footprint gas lasers. The FQ-OPSL will provide an ideal laser source for Raman spectroscopy because the 244nm emission line provides 40 times the Raman scattering efficiency and is below the autofluorescence values of most organic materials. The suppression of autofluorescence will improve the signal to noise and reduce the detection threshold for chemicals such as explosive and pharmaceuticals. The small format high output package also offer commercial opportunities in the field of maskless lithography for improved circuit board and semiconductor manufacturing and non-line-of-site military communication for improve within theatre communication speeds up to 100 MB/s.

* Information listed above is at the time of submission. *

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