High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-12-C-0327
Agency Tracking Number: N12A-003-0339
Amount: $149,950.00
Phase: Phase I
Program: STTR
Awards Year: 2012
Solicitation Year: 2012
Solicitation Topic Code: N12A-T003
Solicitation Number: 2012.A
Small Business Information
25 Tiana Place, Dix Hills, NY, 11746-5215
DUNS: 877211664
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Jie Piao
 President
 (516) 508-0060
 jsdmh23@gmail.com
Business Contact
 Jie Piao
Title: President
Phone: (516) 508-0060
Email: jsdmh23@gmail.com
Research Institution
 Princeton University
 Joseph X Montemarano
 324 Bowen Hall
Princeton, NJ, 08540-5211
 (609) 258-2267
 Nonprofit college or university
Abstract
This STTR phase I project aims to develop a novel material system for muti-Watt level, Room Temperature 3.0 to 3.5 micron Quantum Cascade Lasers (QCLs) utilizing our state-of-art in house Mod Gen II molecular beam epitaxy (MBE) system. Due to their bi-polar nature and the exponentially increasing nature of Auger process with wavelength, laser diodes (LDs) has failed to demonstrate high performance short wavelength mid-IR lasing. On the other hand, due to the uni-polar nature, QCLs have shown excellent performance in the range of 4.5 micron and longer wavelength. With the help of InGaAs/AlInAs/InP material system, 3.4 W lasing at 4.8 micron is obtained operating at RT in CW mode. However, due to the conduction band offset (CBO) limitation, this material system cannot offer Watt-level lasers shorter than near 4.5 micron. To make up the vacancy of high performance short wavelength mid-IR semiconductor lasers, We propose an new approach that will enable muti-Watt level, Room Temperature 3.0 to 3.5 micron QCLs. In Phase I, we will demonstrate QCLs operating in pulsed mode. In Phase II, we will optimize the design and parameter to realize Watt-level QCLs operating in the wavelength range of 3.0 to 3.5 micron at RT.

* Information listed above is at the time of submission. *

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