Monolithically integrated AlN/GaN electronics for harsh environments

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$96,891.00
Award Year:
2012
Program:
SBIR
Phase:
Phase I
Contract:
NNX12CE68P
Agency Tracking Number:
115561
Solicitation Year:
2011
Solicitation Topic Code:
S5.05
Solicitation Number:
n/a
Small Business Information
SVT Associates
7620 Executive Drive, Eden Prairie, MN, 55344-3677
Hubzone Owned:
N
Socially and Economically Disadvantaged:
Y
Woman Owned:
N
Duns:
876868647
Principal Investigator:
David Deen
Principal Investigator
(952) 934-2100
deen@svta.com
Business Contact:
Leslie Price
Contract Administrator
(952) 934-2100
price@svta.com
Research Institution:
Stub




Abstract
Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a number of III-V systems in order to improve operational speed. The main goal of this program is to develop wide temperature-operable radiation hard monolithically-integrated electronics based on wide bandgap III-nitride epitaxial structures. In the Phase I program, we propose to develop same-wafer discrete devices (capacitors, HEMTs, and RTDs) by employing a novel multi-layer AlN/GaN heterostructure design, and to demonstrate the radiation hardness of these devices

* information listed above is at the time of submission.

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