Monolithically integrated AlN/GaN electronics for harsh environments

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$96,891.00
Award Year:
2012
Program:
SBIR
Phase:
Phase I
Contract:
NNX12CE68P
Award Id:
n/a
Agency Tracking Number:
115561
Solicitation Year:
2011
Solicitation Topic Code:
S5.05
Solicitation Number:
n/a
Small Business Information
7620 Executive Drive, Eden Prairie, MN, 55344-3677
Hubzone Owned:
N
Minority Owned:
Y
Woman Owned:
N
Duns:
876868647
Principal Investigator:
DavidDeen
Principal Investigator
(952) 934-2100
deen@svta.com
Business Contact:
LesliePrice
Contract Administrator
(952) 934-2100
price@svta.com
Research Institute:
Stub




Abstract
Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a number of III-V systems in order to improve operational speed. The main goal of this program is to develop wide temperature-operable radiation hard monolithically-integrated electronics based on wide bandgap III-nitride epitaxial structures. In the Phase I program, we propose to develop same-wafer discrete devices (capacitors, HEMTs, and RTDs) by employing a novel multi-layer AlN/GaN heterostructure design, and to demonstrate the radiation hardness of these devices

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government