Radiation Hardened Nanobridge based Non-volatile Memory for Space Applications

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$125,000.00
Award Year:
2012
Program:
SBIR
Phase:
Phase I
Contract:
NNX12CF57P
Award Id:
n/a
Agency Tracking Number:
115737
Solicitation Year:
2011
Solicitation Topic Code:
X6.02
Solicitation Number:
n/a
Small Business Information
158 Wheatland Drive, Pembroke, VA, 24136-3645
Hubzone Owned:
Y
Minority Owned:
N
Woman Owned:
N
Duns:
008963758
Principal Investigator:
Yuhong Kang
Principal Investigator
(540) 626-6266
ekang@nanosonic.com
Business Contact:
Lisa Lawson
Contracts Administrator
(540) 626-6266
llawson@nanosonic.com
Research Institution:
Stub




Abstract
This NASA Phase I SBIR program would develop and demonstrate radiation hardened nanobridge based non-volatile memory (NVM) for space applications. Specifically, we would combine advances in the resistive memory materials, including solid electrolytes, metal oxides, and metal oxide composites, with atomic layer deposition (ALD) and interference lithography patterning (ILP) techniques, to realize the radiation hardened NVM devices and arrays with high reliability. NanoSonic has demonstrated a nanobridge based resistive memory with on-off ratios of 106, device power consumption of 10-5 Watts and switching speeds of 100ns. We have also demonstrated ILP techniques for the patterning of nanostructured 2D arrays and 3D structures with spatial resolution on the order of tens of nm. During the program, we will first investigate the responsible mechanisms for radiation hardened nanobridge based resistive memories. Based on this study, the candidate metal electrode and dielectric materials will be evaluated and selected for optimal performance for radiation harden application. NanoSonic will fabricated arrayed devices with ultradense crossbar latches structure, using radiation hardened metal oxides such as TiO2, SiO2, Ta2O5, especially composite TaSiO to validate our design rules for radiation hardened memories. The atomic layer deposition (ALD), e-beam evaporation, sputtering and will be used to achieve the targeted device performance. During Phase I, memory device parameters namely on?off ratio, on-state current, switching time, retention time, cycling endurance, power consumption and rectification will be investigated using extensive facilities available in NanoSonic and Virginia Tech. NanoSonic will conduct pre, post and in situ radiation characterization of such devices at Colorado State University and Texas A & M University.

* information listed above is at the time of submission.

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