OZARK INTEGRATED CIRCUITS, INC.

Company Information
Address 700 W RESEARCH CENTER BLVD
FAYETTEVILLE, AR, 72701-7175


Information

DUNS: 967759924

# of Employees: 6


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. Advanced Data Logging Electronics for High Pressure and Temperature Subsurface Environments

    Amount: $154,487.00

    Access to the earth’s subsurface requires technologies that can operate at extremely high temperatures and pressures. Well data loggers and boring equipment require electronics that are embedded in ...

    SBIRPhase I2017Department of Energy
  2. Large Area, Scalable UV Detectors Based on Silicon Carbide

    Amount: $154,828.25

    State-of-the-art solid-state deep-ultraviolet photon detection devices (for light wavelengths less than 300 nanometers) are based on wide bandgap semiconductors, such as vertical SiC Geiger-Mode Avala ...

    SBIRPhase I2017Department of Energy
  3. Rugged, Long-Life Flow Monitoring for Enhanced Geothermal Systems

    Amount: $154,802.64

    Access to the earth’s subsurface requires technologies that can operate at extremely high temperatures and pressures. Only half of drilled geothermal wells lead to a productive site. Enhanced geothe ...

    SBIRPhase I2017Department of Energy
  4. Highly Scalable SiC UV Imager for Earth & Planetary Science

    Amount: $749,213.00

    Commercial silicon carbide (SiC)-based photonic sensors typically use p-i-n photodiode and reversed-biased Avalanche Photodiode (APD) detectors. These state-of-the-art SiC photodiodes use the wafer su ...

    SBIRPhase II2016National Aeronautics and Space Administration
  5. A Wide-Temperature Range Wire-Line Communication Link Using the NASA Glenn SiC JFET Technology

    Amount: $124,982.00

    NASA has demonstrated a resolve for a flagship mission in the coming years to revisit Venus and land instruments on the surface. Venus has a corrosive, high pressure (~100 bar), high-temperature (up t ...

    SBIRPhase I2016National Aeronautics and Space Administration
  6. A SiC-based Microcontroller for High-Temperature In-Situ Instruments and Systems

    Amount: $124,961.00

    NASA has a need for electronics that can support proposed flagship missions such as a Venus surface lander. Devices that can operate at temperatures of up to 500?C are desired. Ozark IC and its part ...

    SBIRPhase I2015National Aeronautics and Space Administration
  7. Highly Scalable SiC UV Imager for Earth & Planetary Science

    Amount: $120,626.00

    Commercial silicon carbide (SiC)-based photonic sensors typically use p–i–n photodiode and reversed-biased Avalanche Photodiode (APD) detectors. These state-of-the-art SiC photodioides use t ...

    SBIRPhase I2015National Aeronautics and Space Administration
  8. SBIR Phase I: High Gain, Low Noise Integrated SiC Optoelectronic Isolation for High Temperature Electronics

    Amount: $149,187.00

    This Small Business Innovation Research Phase I project will investigate the feasibility of utilizing Silicon Carbide (SiC) based electronics to create wide-temperature, low-noise, high-speed optoelec ...

    SBIRPhase I2013National Science Foundation
  9. Wide-Temperature Radiation-Hardened Interface Chipsets Utilizing Delay-Insensitive Asynchronous Logic

    Amount: $124,589.00

    There is a continual drive to move electronics out of the "warm box" to their point of use on space platforms. This requires electronics that can operate reliably over a wide range of tempe ...

    SBIRPhase I2012National Aeronautics and Space Administration

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