Novel Method for Growth of Detector-Grade CZT Crystals

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$998,532.00
Award Year:
2012
Program:
SBIR
Phase:
Phase II
Contract:
DE-FG02-11ER90076
Award Id:
n/a
Agency Tracking Number:
97530
Solicitation Year:
2012
Solicitation Topic Code:
51 b
Solicitation Number:
DE-FOA-0000676
Small Business Information
6 Huron Drive, Natick, MA, 01760-1325
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
807651260
Principal Investigator:
Shariar Motakef
Dr.
(508) 653-7100
motakef@capesim.com
Business Contact:
Shariar Motakef
Dr.
(508) 653-7100
motakef@capesim.com
Research Institute:
Stub




Abstract
CdZnTe remains the material of choice for room temperature semiconductor detection of X- and -ray radiation, but the availability of high performance material is limited and the cost is very high. The goal of this project is to develop a new technology for production of large volumes of CZT single crystals with a high yield of detector-grade CZT crystals. In Phase I we demonstrated the viability of this technology and produced a CZT detector with a lifetime-mobility product value of 10-2cm2/V. The Phase II effort will focus on growth of large diameter crystals of high compositional uniformity, and on engineering of native point defects and second phase precipitates to produce high resistivity, high lifetime-mobility product, and high resolution detectors. The unique capabilities of the growth process under development will be leveraged to achieve these goals. The success of this program promises to result in higher availability and lower cost of large volume detectors needed for homeland security and medical applications.Commercial Applications and Other Benefits: Wide band gap semiconductors such as CdZnte are exceptionally suitable for detection of nuclear radiation. They have applications as inspection tools in homeland security, Positron Emission Tomography (PET) and scinti- mammography in medicine, and nuclear energy monitoring devices

* information listed above is at the time of submission.

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