Integrated 2.0 Micron Modelocked Laser for E-SASE Advanced Accelerator Applications

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-FG02-12ER90286
Agency Tracking Number: 98830
Amount: $148,423.00
Phase: Phase I
Program: SBIR
Awards Year: 2012
Solicitation Year: 2012
Solicitation Topic Code: 12 c
Solicitation Number: DE-FOA-0000577
Small Business Information
535 Del Rey Ave., Sunnyvale, CA, -
DUNS: 125200837
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 William Bischel
 Dr.
 (650) 940-9898
 bbischel@gener8.net
Business Contact
 William Bischel
Title: Dr.
Phone: (650) 940-9898
Email: bbischel@gener8.net
Research Institution
 Stub
Abstract
We propose a novel new architecture for a mode-locked laser at 2.0 microns that is designed to achieve sub-100 fs pulse widths for application to free-electron laser (FEL)-based light sources that are using the enhanced self-amplified spontaneous emission (ESASE). The laser design uses hybrid-integration to directly incorporate carrier phase envelope (CEP) stabilization in the femtosecond modelocked laser oscillator cavity. This design eliminates all mechanical adjustments or moving parts that are currently used in CEP systems and require periodic alignment using mechanical motion. Most of the large free-space optical components currently used in femtosecond laser systems are replaced with waveguide chips that implement all the optical functions required for long term stability in a small compact footprint.

* Information listed above is at the time of submission. *

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