Integrated 2.0 Micron Modelocked Laser for E-SASE Advanced Accelerator Applications
Department of Energy
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535 Del Rey Ave., Sunnyvale, CA, -
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AbstractWe propose a novel new architecture for a mode-locked laser at 2.0 microns that is designed to achieve sub-100 fs pulse widths for application to free-electron laser (FEL)-based light sources that are using the enhanced self-amplified spontaneous emission (ESASE). The laser design uses hybrid-integration to directly incorporate carrier phase envelope (CEP) stabilization in the femtosecond modelocked laser oscillator cavity. This design eliminates all mechanical adjustments or moving parts that are currently used in CEP systems and require periodic alignment using mechanical motion. Most of the large free-space optical components currently used in femtosecond laser systems are replaced with waveguide chips that implement all the optical functions required for long term stability in a small compact footprint.
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