Wide Bandgap Gallium Phosphide Detectors

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$150,000.00
Award Year:
2012
Program:
STTR
Phase:
Phase I
Contract:
DE-FG02-12ER86524
Award Id:
n/a
Agency Tracking Number:
99403
Solicitation Year:
2012
Solicitation Topic Code:
33 c
Solicitation Number:
DE-FOA-0000577
Small Business Information
7259 E. Cortez Rd., Scottsdale, AZ, 85260-5459
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
968459961
Principal Investigator:
CharlesAllen
Dr.
(765) 490-0454
charles.allen@ziptonlabs.com
Business Contact:
Yong-HangZhang
Dr.
(480) 600-3838
yhzhang@ziptonlabs.com
Research Institute:
Purdue University

465
Northwestern Avenue
West Lafayette, IN, 47910-2035
() -

Abstract
Zipton Labs LLC will demonstrate the feasibility of avalanche photodiodes made from gallium phosphide grown on silicon virtual substrates. To increase material quality and decrease dark-current noise, gettering will be performed on the substrate and epilayer. The photodetectors will give superior UV quantum efficiencies to that of UV-sensitized silicon photodiodes at a price point much lower than other wider bandgap alternatives.

* information listed above is at the time of submission.

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