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Innovative Passivation to Increase the Power at Which Laser Diode Fails

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-13-C-0053
Agency Tracking Number: D122-005-0001
Amount: $99,860.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: SB122-005
Solicitation Number: 2012.2
Timeline
Solicitation Year: 2012
Award Year: 2012
Award Start Date (Proposal Award Date): 2012-12-11
Award End Date (Contract End Date): N/A
Small Business Information
15 WARD STREET
SOMERVILLE, MA -
United States
DUNS: 106771140
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 ANDREW WALSH
 SENIOR RESEARCH SCIENTIST
 (617) 547-1122
 AWALSH@SRL.COM
Business Contact
 JONAH JACOB
Title: PRESIDENT
Phone: (617) 547-1122
Email: jjacob@srl.com
Research Institution
 Stub
Abstract

The objective of this effort is to increase the power of 20% fill-factor laser diode (LD) bars from the present state-of-the-art (SOA) of 60-70 W/bar to 600 W/bar a"DARPA hard"ten-fold increase. This revolutionary and disruptive increase in the power/bar will be accomplished by increasing the power at which SOA LDs fail, namely, increasing the threshold for catastrophic optical damage (COD) of the LD by improving the passivation of the facets. While SOA LD passivations are perfectly acceptable for SOA bars operating at 60-70 W, they are not capable of withstanding the 600 W/bar required for our military HELs.

* Information listed above is at the time of submission. *

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