Radiation Effects Characterization Tool for SiGe Processes

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: HDTRA1-12-P-0038
Agency Tracking Number: T121--02-0010
Amount: $148,309.00
Phase: Phase I
Program: SBIR
Awards Year: 2012
Solicitation Year: 2012
Solicitation Topic Code: DTRA121-002
Solicitation Number: 2012.1
Small Business Information
3580 West Ina Rd, Tucson, AZ, -
DUNS: 157955597
HUBZone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: N
Principal Investigator
 Esko Mikkola
 Sr. Principal Engineer
 (520) 742-3300
 emikkola@ridgetopgroup.com
Business Contact
 Douglas Goodman
Title: President and CEO
Phone: (520) 742-3300
Email: dgoodman@ridgetopgroup.com
Research Institution
 Stub
Abstract
Ridgetop Group will develop a low-cost reliability and radiation effects characterization tool for state-of-the art silicon-germanium (SiGe) fabrication processes. The significance of this innovation is that SiGe bipolar complementary metal oxide semiconductor (BiCMOS) integrated circuits (ICs) have demonstrated extremely high performance for critical DOD applications, and SiGe has also been shown to have low susceptibility to total dose and displacement damage radiation effects, making SiGe a strong candidate for space applications. Ridgetop"s ProChek characterization tool will support the wider application of SiGe circuits in advanced spacecraft and missile systems, which can improve production yield and help reduce costs. SiGe BiCMOS circuits offer many benefits compared to their silicon CMOS counterparts for space microelectronics engineering. SiGe implementations have an advantage in terms of higher circuit speed, better transistor matching, and better noise performance. They also operate significantly better in extreme temperatures and are very robust against total ionizing dose (TID) radiation effects. The work will concentrate on IBM"s newest SiGe BiCMOS offering, the 9HP process, which provides ultra-fast SiGe hetero bipolar transistors (HBTs) to 300GHz fT and 385 GHz fMAX, as well as 90 nm CMOS devices. The result will be a more comprehensive reliability and performance characterization that can be incorporated into more precise design models having more accuracy.

* Information listed above is at the time of submission. *

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