The Characterization and Mitigation of Radiation Effects on Nano-technology Microelectronics

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: HDTRA1-12-P-0041
Agency Tracking Number: T121--02-0013
Amount: $150,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2012
Solicitation Year: 2012
Solicitation Topic Code: DTRA121-002
Solicitation Number: 2012.1
Small Business Information
Scientic, Inc
555 Sparkman Drive, Suite 214, Huntsville, AL, -
DUNS: 826034550
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jeff Dame
 Director of Advance Technologies
 (256) 319-0860
 jeff.dame@scientic.us
Business Contact
 Gary Grant
Title: Vice President - Contracts
Phone: (256) 319-0858
Email: gary.grant@scientic.us
Research Institution
 Stub
Abstract
The ultimate goal of this effort is the development of advanced radiation hardened material systems and technology solutions for implementation into both silicon and compound semiconductor technologies at the nanotechnology feature sizes through the use of a gridded capacitor research methodology. To accomplish this, our team proposes to identify, fabricate, and electrically characterize both pre- and post-radiation stress various advanced gate structures, materials, and processes that can be implemented in existing CMOS fabrication processes utilizing nanotechnology feature sizes to reach this goal. Therefore, the Phase I objectives are: X Identify Current Gate Structure Issues X Fabricate and Package Gridded Capacitor Structures for Electrical/Radiation Evaluation X Evaluate and Characterize the Electrical Performance and Radiation Hardness of the Fabricated Gridded Capacitor Structures X Identify Potential Foundry Partner(s) for Subsequent Development

* information listed above is at the time of submission.

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