Electrical and Thermal Coupled Fast SiC Device Model for Circuit Simulations

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911QX-12-C-0046
Agency Tracking Number: O113-EP1-2125
Amount: $149,933.00
Phase: Phase I
Program: SBIR
Awards Year: 2012
Solicitation Year: 2011
Solicitation Topic Code: OSD11-EP1
Solicitation Number: 2011.3
Small Business Information
1046 New Holland Avenue, Lancaster, PA, -
DUNS: 126288336
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Anqi Fan
 Research&Development Engineer
 (717) 295-6069
Business Contact
 William Anderson
Title: Chief Engineer
Phone: (717) 295-6104
Email: Bill.Anderson@1-act.com
Research Institution
Silicon carbide (SiC) based devices are currently under investigation for their improved efficiency and high thermal stability. Compared to silicon, SiC has an exceptionally high thermal conductivity and also exhibits better mechanical properties. However, limited research has been performed on SiC device-level model development that can be used for developing circuit level designs. In many cases, thermal effects and other physics are neglected during circuit design because the current methods are too computationally expensive to be practical. In high power/high frequency devices, significant heat generation is caused by interactions between the energetic electrons and the lattice. The electrical behavior of the devices is therefore altered due to the coupling of electrical and thermal characteristics. Unrealistic simulation results are generated when the temperature change is not considered simultaneously. The proposed program will develop a hybrid of physical and tabular models for silicon carbide (SiC) high-powered devices for fast and accurate circuit simulation. The primary Phase I objective will be to demonstrate the feasibility of the proposed SiC-based device model and the ability of integrating the device model into fast circuit models.

* Information listed above is at the time of submission. *

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