Electrical and Thermal Coupled Fast SiC Device Model for Circuit Simulations

Award Information
Agency:
Department of Defense
Branch
n/a
Amount:
$149,933.00
Award Year:
2012
Program:
SBIR
Phase:
Phase I
Contract:
W911QX-12-C-0046
Award Id:
n/a
Agency Tracking Number:
O113-EP1-2125
Solicitation Year:
2011
Solicitation Topic Code:
OSD11-EP1
Solicitation Number:
2011.3
Small Business Information
1046 New Holland Avenue, Lancaster, PA, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
126288336
Principal Investigator:
Anqi Fan
Research&Development Engineer
(717) 295-6069
angie.fan@1-act.com
Business Contact:
William Anderson
Chief Engineer
(717) 295-6104
Bill.Anderson@1-act.com
Research Institute:
Stub




Abstract
Silicon carbide (SiC) based devices are currently under investigation for their improved efficiency and high thermal stability. Compared to silicon, SiC has an exceptionally high thermal conductivity and also exhibits better mechanical properties. However, limited research has been performed on SiC device-level model development that can be used for developing circuit level designs. In many cases, thermal effects and other physics are neglected during circuit design because the current methods are too computationally expensive to be practical. In high power/high frequency devices, significant heat generation is caused by interactions between the energetic electrons and the lattice. The electrical behavior of the devices is therefore altered due to the coupling of electrical and thermal characteristics. Unrealistic simulation results are generated when the temperature change is not considered simultaneously. The proposed program will develop a hybrid of physical and tabular models for silicon carbide (SiC) high-powered devices for fast and accurate circuit simulation. The primary Phase I objective will be to demonstrate the feasibility of the proposed SiC-based device model and the ability of integrating the device model into fast circuit models.

* information listed above is at the time of submission.

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