A Scheme to Reduce Dark Current in SLS FPAs

Award Information
Agency:
Department of Defense
Branch
n/a
Amount:
$100,000.00
Award Year:
2012
Program:
SBIR
Phase:
Phase I
Contract:
HQ0147-12-C-7876
Award Id:
n/a
Agency Tracking Number:
B112-005-0526
Solicitation Year:
2011
Solicitation Topic Code:
MDA11-005
Solicitation Number:
2011.2
Small Business Information
22 Cotton Road, Unit H, Suite 180, Nashua, NH, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
168454770
Principal Investigator:
Mani Sundaram
CEO
(603) 821-3092
msundaram@qmagiq.com
Business Contact:
Axel Reisinger
CTO
(603) 821-3092
areisinger@qmagiq.com
Research Institution:
Stub




Abstract
Longwave infrared focal plane arrays (FPAs) based on Type-II InAs/GaSb-based strained layer superlattice (SLS) photodiodes show good performance at the current time. A key remaining challenge is the reduction of dark current, dominated by pixel surface leakage in FPAs and low minority carrier lifetime in the bulk material. We propose to address the former in this Phase I and develop a unique scheme to reduce dark current in small pixels by a factor of 10x, approaching bulk leakage values. In Phase II, we will apply the technique to make very large format FPAs.

* information listed above is at the time of submission.

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