A Scheme to Reduce Dark Current in SLS FPAs

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-12-C-7876
Agency Tracking Number: B112-005-0526
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2012
Solicitation Year: 2011
Solicitation Topic Code: MDA11-005
Solicitation Number: 2011.2
Small Business Information
22 Cotton Road, Unit H, Suite 180, Nashua, NH, -
DUNS: 168454770
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Mani Sundaram
 (603) 821-3092
Business Contact
 Axel Reisinger
Title: CTO
Phone: (603) 821-3092
Email: areisinger@qmagiq.com
Research Institution
Longwave infrared focal plane arrays (FPAs) based on Type-II InAs/GaSb-based strained layer superlattice (SLS) photodiodes show good performance at the current time. A key remaining challenge is the reduction of dark current, dominated by pixel surface leakage in FPAs and low minority carrier lifetime in the bulk material. We propose to address the former in this Phase I and develop a unique scheme to reduce dark current in small pixels by a factor of 10x, approaching bulk leakage values. In Phase II, we will apply the technique to make very large format FPAs.

* Information listed above is at the time of submission. *

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