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Smart Infrared Focal Plane Arrays and Advanced Electronics

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-12-C-7838
Agency Tracking Number: B112-005-0529
Amount: $98,204.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: MDA11-005
Solicitation Number: 2011.2
Solicitation Year: 2011
Award Year: 2012
Award Start Date (Proposal Award Date): 2012-02-01
Award End Date (Contract End Date): N/A
Small Business Information
1808 E. 17th St, Tucson, AZ, -
DUNS: 063287890
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Ken Salvestrini
 Engineering Mgr
 (520) 622-7074
Business Contact
 Cathy Burnes
Title: Contracts Manager
Phone: (520) 622-7074
Research Institution
The SBIR MDA11-005 posted a well depth requirement of up to 50 Million electrons for a pixel pitch of 12um~20um to achieve the targeted high dynamic range, low noise and high resolution imaging goal. Initial calculations, given a commercial 0.18um/3.3V process, and using the entire pixel area at the maximum pixel pitch (20um), yields 24 Million electron well capacity when all the pixel area are taken to lay out the storage capacitor, with a presumed 2V voltage swing. Obviously, the traditional approach which uses a capacitor to store the whole photon induced charges accumulated in the integration to conduct the charge-voltage conversion is impossible to meet the goal. The challenge doesn"t stop there. The further requirement is to achieve low noise while realizing the large well depth. With traditional analog pixel design, these two requirements are actually contradicting with each other.

* Information listed above is at the time of submission. *

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