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Develop and Demonstrate High Performance Infrared Focal Plane Arrays with Advanced Quantum Structures

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-12-C-7911
Agency Tracking Number: B112-019-0440
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: MDA11-019
Solicitation Number: 2011.2
Solicitation Year: 2011
Award Year: 2012
Award Start Date (Proposal Award Date): 2012-02-01
Award End Date (Contract End Date): N/A
Small Business Information
1475 N SCOTTSDALE RD STE 200, Scottsdale, AZ, -
DUNS: 968459961
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Charles Allen
 Senior Research Engineer and Projec
 (765) 490-0454
Business Contact
 Yong-Hang Zhang
Title: CEO
Phone: (480) 600-3838
Research Institution
In contrast to conventional type-I multiple quantum wells or superlattices (SL), the interband optical transition in type-II superlattices (T2SL) is spatially indirect. Therefore, its effective bandgap can be narrower than that of any of the single constituent materials. In general, there are two categories of type-II alignments for heterostructures, broken-gap alignment and staggered alignment (see Fig. 1). Such a unique property of T2SL has made it a good candidate for infrared photodetector applications. Significant progress has been made recently in the research on long-wavelength IR InAs/InGaSb T2SLs. These IR detector materials have potential to outperform existing materials such as HgCdTe and InSb. In the past several years, impressive achievements have been demonstrated by several research groups in the US with strong support from MDA. This effort proposes to improve on the state of the art InAs/InAsSb strained layer superlattice devices with better interface characteristics, better reproducibility, and better carrier transport than existing technologies.

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