Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-12-C-0050
Agency Tracking Number: A121-024-0585
Amount: $149,975.00
Phase: Phase I
Program: SBIR
Awards Year: 2012
Solicitation Year: 2012
Solicitation Topic Code: A12-024
Solicitation Number: 2012.1
Small Business Information
IRDT Solutions, Inc
2850 Mesa Verde Drive East, Unit 103, Co, CA, -
DUNS: 830609090
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Honnavalli Vydyanath
 Chief Scientist
 (714) 717-6675
 hvydyanath@gmail.com
Business Contact
 Honnavalli Vydyanath
Title: President
Phone: (714) 717-6675
Email: hvydyanath@gmail.com
Research Institution
 Stub
Abstract
Phase I objective is to demonstrate the feasibility of our approach to reduce the dislocation density to below 1E5 cm-2 in LWIR HgCdTe epitaxial layers grown on Si substrates. Phase II objective is to demonstrate dislocation density to below 1E5 cm-2 reproducibly in LWIR HgCdTe epitaxial layers grown on 3 inch diameter Si substrates and to demonstrate high performance LWIR focal plane arrays in 2Kx2K or larger formats.

* information listed above is at the time of submission.

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