Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$149,975.00
Award Year:
2012
Program:
SBIR
Phase:
Phase I
Contract:
W911NF-12-C-0050
Award Id:
n/a
Agency Tracking Number:
A121-024-0585
Solicitation Year:
2012
Solicitation Topic Code:
A12-024
Solicitation Number:
2012.1
Small Business Information
2850 Mesa Verde Drive East, Unit 103, Co, CA, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
830609090
Principal Investigator:
HonnavalliVydyanath
Chief Scientist
(714) 717-6675
hvydyanath@gmail.com
Business Contact:
HonnavalliVydyanath
President
(714) 717-6675
hvydyanath@gmail.com
Research Institute:
Stub




Abstract
Phase I objective is to demonstrate the feasibility of our approach to reduce the dislocation density to below 1E5 cm-2 in LWIR HgCdTe epitaxial layers grown on Si substrates. Phase II objective is to demonstrate dislocation density to below 1E5 cm-2 reproducibly in LWIR HgCdTe epitaxial layers grown on 3 inch diameter Si substrates and to demonstrate high performance LWIR focal plane arrays in 2Kx2K or larger formats.

* information listed above is at the time of submission.

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