High Speed and Low Operating Voltage Laser Q-Switch

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$88,722.00
Award Year:
2012
Program:
SBIR
Phase:
Phase I
Contract:
W909MY-12-C-0018
Agency Tracking Number:
A121-037-0556
Solicitation Year:
2012
Solicitation Topic Code:
A12-037
Solicitation Number:
2012.1
Small Business Information
Agiltron Corporation
15 Presidential Way, Wo, MA, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
004841644
Principal Investigator:
Steve Wu
Senior Scientist
(781) 935-1200
swu@agiltron.com
Business Contact:
Amanda Contardo
Contracts Administrator
(781) 935-1200
acontardo@agiltron.com
Research Institution:
Stub




Abstract
A laser Q-Switch with a low drive voltage and low insertion loss is needed. Today"s electro-optic crystal Q-switch requires high voltage, and the saturable absorber passive Q-switch introduces significant losses in the cavity. Agiltron, Inc., an experienced manufacturer of MEMS chips and MEMS based optical switches, proposes to develop a new MEMS-based laser Q-switch which is compact, ruggedized and only needs less than 200 V drive voltage. The design will be the first MEMS laser Q- switch optimized specifically to meet the requirements for use in designation, marking, and range-finding, and will possess properties of reliability, miniature size, low optical loss, and resistance to shock and can work over a temperature range of -40 to +60 degrees Celsius. Three advances in Agiltron switch technology will be combined to achieve these goals, including a new MEMS actuation mechanism, vast experience in laser systems, and qualified packaging. The MEMS Q-switch will be modeled and fabricated in Phase I. And 20 optimized Q-switch modulators will be built and delivered in Phase II.

* information listed above is at the time of submission.

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