Compact, Efficient, High Power Semiconductor Laser for Undersea Communication

Award Information
Agency:
Department of Defense
Branch:
Navy
Amount:
$79,995.00
Award Year:
2012
Program:
SBIR
Phase:
Phase I
Contract:
N00014-12-M-0024
Agency Tracking Number:
N112-167-1013
Solicitation Year:
2011
Solicitation Topic Code:
N112-167
Solicitation Number:
2011.2
Small Business Information
Kyma Technologies, Inc.
8829 Midway West Road, Raleigh, NC, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator
 Jacob Leach
 Characterization/Device E
 (919) 789-8880
 leach@kymatech.com
Business Contact
 Heather Splawn
Title: Director of Business Deve
Phone: (919) 789-8880
Email: contracts@kymatech.com
Research Institution
 Stub
Abstract
In this proposal, we build on demonstrated expertise in Bulk GaN growth (Kyma Technologies), High Indium Mole Fraction InGaN and quaternary AlInGaN growth (NCSU- Salah Bedair), device fabrication and characterization (NCSU- John Muth), Optical Photopumping (ARMDEC- Henry Everitt) and expertise in underwater optical communications (NCSU- John Muth) to assemble a very strong Industrial/University team with a history of working together. Kyma Technologies is a world leader in the production of bulk GaN substrates, including non-polar substrates, and the team has the ability to grow high In mole fraction InGaN as well as quaternary AlInGaN on these substrates. We have demonstrated ability in characterizing the optical gain (via photopumping), making refractive index and waveguide loss measurements (via prism coupling), as well as structural measurements (x-ray and TEM) to assess crystal quality. We have expertise in thermal management and laser testing. As part of this Phase I program we will (1) Demonstrate growth of high quality, high In mole fraction InGaN layers on bulk GaN. (2) Measure the optical and electrical properties of these layers. (3) Examine designs capable of delivering>1 Watt of optical power at 518nm with better than 5% wall plug efficiency and (4) fabricate broad area stripe lasers.

* information listed above is at the time of submission.

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