Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits

Award Information
Agency: Department of Defense
Branch: Navy
Contract: M67854-12-C-6544
Agency Tracking Number: N121-001-0874
Amount: $149,808.00
Phase: Phase I
Program: SBIR
Awards Year: 2012
Solitcitation Year: 2012
Solitcitation Topic Code: N121-001
Solitcitation Number: 2012.1
Small Business Information
Sundew Technologies, LLC
3400 Industrial Lane, Unit 7, Broomfield, CO, -
Duns: 100363857
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Ofer Sneh
 Director of Technology
 (303) 466-2341
 ofer@sundewtech.com
Business Contact
 Anat Sneh
Title: Vice President
Phone: (303) 466-2341
Email: anat@sundewtech.com
Research Institution
 Stub
Abstract
This Phase I proposal targets the development of commercially viable silicon-nitride (SiN) Atomic Layer Deposition (ALD) process for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher quality substitution for SiN passivation layers, currently grown by Plasma Enhanced Chemical Vapor Deposition (PECVD). These better passivation layers will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products.

* information listed above is at the time of submission.

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