Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$149,808.00
Award Year:
2012
Program:
SBIR
Phase:
Phase I
Contract:
M67854-12-C-6544
Award Id:
n/a
Agency Tracking Number:
N121-001-0874
Solicitation Year:
2012
Solicitation Topic Code:
N121-001
Solicitation Number:
2012.1
Small Business Information
3400 Industrial Lane, Unit 7, Broomfield, CO, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
100363857
Principal Investigator:
OferSneh
Director of Technology
(303) 466-2341
ofer@sundewtech.com
Business Contact:
AnatSneh
Vice President
(303) 466-2341
anat@sundewtech.com
Research Institute:
Stub




Abstract
This Phase I proposal targets the development of commercially viable silicon-nitride (SiN) Atomic Layer Deposition (ALD) process for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher quality substitution for SiN passivation layers, currently grown by Plasma Enhanced Chemical Vapor Deposition (PECVD). These better passivation layers will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products.

* information listed above is at the time of submission.

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